component
WSP8814
Public Made by Adomby adom
Winsok Semicon MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSP8814
Winsok Semicon · MOSFETs · TSSOP-8
WSP8814 from Winsok Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Common drain of both N-channel MOSFETs (drains tied together in the schematic, shared with pin 8); VDS max 20 V. |
| 2 | S1 | passive | Source of MOSFET 1, tied with pin 3; pulsed drain current up to 36 A. |
| 3 | S1 | passive | Source of MOSFET 1, tied with pin 2; continuous drain current 9 A at Tc=25℃. |
| 4 | G1 | input | Gate of MOSFET 1; VGS rated ±12 V, threshold 0.5 to 1.2 V. |
| 5 | G2 | input | Gate of MOSFET 2; VGS rated ±12 V, threshold 0.5 to 1.2 V. |
| 6 | S2 | passive | Source of MOSFET 2, tied with pin 7; pulsed drain current up to 36 A. |
| 7 | S2 | passive | Source of MOSFET 2, tied with pin 6; continuous drain current 9 A at Tc=25℃. |
| 8 | D | passive | Common drain of both N-channel MOSFETs (drains tied together in the schematic, shared with pin 1); VDS max 20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@Tc=25℃ | 9 | A | VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID@Tc=70℃ | 7.5 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 70 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.6 | 9.5 | mΩ | VGS=4.5V, ID=9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 13 | mΩ | VGS=2.5V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | 2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 36 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=2A, TJ=25℃ | 2 | ||
| Turn-On Delay Time | Td(on) | 13 | 24 | ns | VDD=10V, VGEN=10V, RG=6Ω, ID=1A, RL=10Ω | 2 | |
| Rise Time | Tr | 16 | 28.5 | ns | VDD=10V, VGEN=10V, RG=6Ω, ID=1A, RL=10Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 40 | 75 | ns | VDD=10V, VGEN=10V, RG=6Ω, ID=1A, RL=10Ω | 2 | |
| Fall Time | Tf | 6 | 11 | ns | VDD=10V, VGEN=10V, RG=6Ω, ID=1A, RL=10Ω | 2 | |
| Reverse Recovery Time | trr | 36.5 | nS | IF=5.5A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.022 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -2.33 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 35 | S | VDS=5V, ID=5A | 2 | ||
| Gate Resistance | Rg | 1.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 27 | nC | VDS=10V, VGS=4.5V, ID=9A | 2 | ||
| Gate-Source Charge | Qgs | 2.5 | nC | VDS=10V, VGS=4.5V, ID=9A | 2 | ||
| Gate-Drain Charge | Qgd | 11.8 | nC | VDS=10V, VGS=4.5V, ID=9A | 2 | ||
| Reverse Recovery Charge | Qrr | 30 | nC | IF=5.5A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Input Capacitance | Ciss | 2000 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 370 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 350 | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
WSP8814 - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp8814-etched.step/wsp8814-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp8814.step/wsp8814.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
e52bb1cb9221106b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).