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WSP8810

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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WSP8810

Winsok Semicon · MOSFETs · TSSOP-8

WSP8810 from Winsok Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; VGS rated ±12 V max, threshold 0.5 to 1.0 V at 250 uA.
2 S1 passive Source of MOSFET 1; continuous drain current 7.5 A at VGS 4.5 V.
3 S1 passive Source of MOSFET 1 (second source pin, tied to pin 2); continuous drain current 7.5 A at VGS 4.5 V.
4 D passive Drain pin drawn as D on the same side as G1/S1; drain-source voltage 20 V max and pulsed drain current 30 A.
5 D passive Drain pin drawn as D on the same side as G2/S2; drain-source voltage 20 V max and pulsed drain current 30 A.
6 S2 passive Source of MOSFET 2; continuous drain current 7.5 A at VGS 4.5 V.
7 S2 passive Source of MOSFET 2 (second source pin, tied to pin 6); continuous drain current 7.5 A at VGS 4.5 V.
8 G2 input Gate of MOSFET 2; VGS rated ±12 V max, threshold 0.5 to 1.0 V at 250 uA.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@Tc=25℃ 7.5 A VGS @ 4.5V, Note 1 1
Continuous Drain Current ID@Tc=70℃ 6 A VGS @ 4.5V, Note 1 1
Pulsed Drain Current IDM 30 A Note 2: pulse width ≤300us, duty cycle ≤2% 1
Total Power Dissipation PD@TA=25℃ 1.25 W Note 3 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 100 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10sec 1
Thermal Resistance Junction-Case RθJC 70 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10sec 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 11.5 14.5 mΩ VGS=4.5V, ID=7.5A 2
Static Drain-Source On-Resistance RDS(ON) 14.5 20 mΩ VGS=2.5V, ID=5A 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Total Gate Charge (4.5V) Qg 13.5 18 nC VDS=10V, VGS=4.5V, ID=7.5A 2
Turn-On Delay Time Td(on) 10.8 20 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Rise Time Tr 14.5 26 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Turn-Off Delay Time Td(off) 51 55 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Fall Time Tf 45 81 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Continuous Source Current IS 1.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 30 A 2
Diode Forward Voltage VSD 0.7 1.3 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP8810
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp8810-etched.step / wsp8810-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp8810.step / wsp8810.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 123eae8bce2ce158, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF