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Contents

README

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WSP8205A

Winsok Semicon · MOSFETs · TSSOP-8

WSP8205A from Winsok Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Common drain of both N-channel MOSFETs (internally tied to pin 8), with VDS rated 20 V.
2 S1 passive Source of MOSFET 1, with continuous drain current of 5.5 A at VGS 4.5 V.
3 S1 passive Source of MOSFET 1, with continuous drain current of 5.5 A at VGS 4.5 V.
4 G1 input Gate of MOSFET 1, with VGS rated ±12 V and threshold of 0.4 to 1.0 V.
5 G2 input Gate of MOSFET 2, with VGS rated ±12 V and threshold of 0.4 to 1.0 V.
6 S2 passive Source of MOSFET 2, with continuous drain current of 5.5 A at VGS 4.5 V.
7 S2 passive Source of MOSFET 2, with continuous drain current of 5.5 A at VGS 4.5 V.
8 D passive Common drain of both N-channel MOSFETs (internally tied to pin 1), with VDS rated 20 V.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@Tc=25℃ 5.5 A VGS @ 4.5V 1
Continuous Drain Current ID@Tc=70℃ 5.2 A VGS @ 4.5V 1
Pulsed Drain Current IDM 20 A 1
Total Power Dissipation PD@TA=25℃ 1.25 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 100 ℃/W 1
Thermal Resistance Junction-Case RθJC 70 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 20 27 mΩ VGS=10V , ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 26 28 30 mΩ VGS=4.5V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 28 32 35 mΩ VGS=3.1V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 34 36 39 mΩ VGS=2.5V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 38 42 55 mΩ VGS=1.8V , ID=2A 2
Gate Threshold Voltage VGS(th) 0.4 0.7 1 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Total Gate Charge (4.5V) Qg 8.8 11.9 nC VDS=10V , VGS=4.5V , ID=6A 2
Gate-Source Charge Qgs 0.8 2 nC 2
Gate-Drain Charge Qgd 3.3 3.2 nC 2
Turn-On Delay Time Td(on) 5 10 ns VDD=10V , VGEN=4.5V , RG=6Ω, ID=1A ,RL=10Ω. 2
Rise Time Tr 15 26 ns 2
Turn-Off Delay Time Td(off) 30 55 ns 2
Fall Time Tf 5 10 ns 2
Continuous Source Current IS 1.5 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 20 A 2
Diode Forward Voltage VSD 1.3 V VGS=0V , IS=1.5A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP8205A
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp8205a-etched.step / wsp8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp8205a.step / wsp8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 c29860fd4df302ad, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF