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Contents

README

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WSP8205

Winsok Semicon · MOSFETs · TSSOP-8

WSP8205 from Winsok Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Common drain of both N-channel MOSFETs, tied internally to pin 8; VDS rated 20 V.
2 S1 passive Source of MOSFET 1, shorted to pin 3 in the schematic.
3 S1 passive Source of MOSFET 1, shorted to pin 2 in the schematic.
4 G1 input Gate of MOSFET 1; VGS rated ±12 V.
5 G2 input Gate of MOSFET 2; VGS rated ±12 V.
6 S2 passive Source of MOSFET 2, shorted to pin 7 in the schematic.
7 S2 passive Source of MOSFET 2, shorted to pin 6 in the schematic.
8 D passive Common drain of both N-channel MOSFETs, tied internally to pin 1; VDS rated 20 V.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V Printed as ±12 V 1
Continuous Drain Current ID@Tc=25℃ 6 A Tc=25℃, VGS @ 4.5V (note 1) 1
Continuous Drain Current ID@Tc=70℃ 5.2 A Tc=70℃, VGS @ 4.5V (note 1) 1
Pulsed Drain Current IDM 20 A Pulse width ≤300us, duty cycle ≤2% (note 2) 1
Total Power Dissipation PD@TA=25℃ 1.25 W TA=25℃ (note 3) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 100 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 sec (note 1) 1
Thermal Resistance Junction-Case RθJC 70 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 sec (note 1) 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 16 20 27 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 19 23 30 mΩ VGS=4.5V, ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 22 27 35 mΩ VGS=3.1V, ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 25 30 39 mΩ VGS=2.5V, ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 32 42 55 mΩ VGS=1.8V, ID=2A 2
Gate Threshold Voltage VGS(th) 0.4 0.7 1 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Total Gate Charge (4.5V) Qg 8.8 11.9 nC VDS=10V, VGS=4.5V, ID=6A 2
Gate-Source Charge Qgs 0.8 2 nC VDS=10V, VGS=4.5V, ID=6A 2
Gate-Drain Charge Qgd 3.3 3.2 nC VDS=10V, VGS=4.5V, ID=6A 2
Turn-On Delay Time Td(on) 5 10 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=1A, RL=10Ω 2
Rise Time Tr 15 26 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=1A, RL=10Ω 2
Turn-Off Delay Time Td(off) 30 55 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=1A, RL=10Ω 2
Fall Time Tf 5 10 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=1A, RL=10Ω 2
Continuous Source Current IS 1.5 A VG=VD=0V, Force Current (note 1, 4) 2
Pulsed Source Current ISM 20 A 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=1.5A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP8205
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp8205-etched.step / wsp8205-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp8205.step / wsp8205.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 7fecd6b25b91cff5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF