component
WSP6946
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSP6946
Winsok Semicon · MOSFETs · SOP-8
WSP6946 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); VDS rating 60 V, ID 6.5 A. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V, threshold 1.0 to 3.0 V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); VDS rating 60 V, ID 6.5 A. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V, threshold 1.0 to 3.0 V. |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage up to 60 V, pulsed drain current 24 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (tied to pin 5); drain-source voltage up to 60 V, pulsed drain current 24 A. |
| 7 | D1 | passive | Drain of MOSFET 1; drain-source voltage up to 60 V, pulsed drain current 24 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (tied to pin 7); drain-source voltage up to 60 V, pulsed drain current 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 6.5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 4.5 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 12 | mJ | 1 | |||
| Avalanche Current | IAS | 16 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 90 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 45 | mΩ | VGS=10V , ID=6.3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 50 | mΩ | VGS=4.5V , ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Resistance | Rg | 2.5 | 5 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 14 | 20 | nC | VDS=48V , VGS=10V , ID=6.3A | 2 | |
| Turn-On Delay Time | Td(on) | 8 | 15 | ns | VDD=30V , VGEN=10V , RG=6Ω, ID=4A ,RL=30Ω | 2 | |
| Rise Time | Tr | 6 | 11 | ns | VDD=30V , VGEN=10V , RG=6Ω, ID=4A ,RL=30Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 23 | 42 | ns | VDD=30V , VGEN=10V , RG=6Ω, ID=4A ,RL=30Ω | 2 | |
| Fall Time | Tf | 6 | 11 | ns | VDD=30V , VGEN=10V , RG=6Ω, ID=4A ,RL=30Ω | 2 | |
| Input Capacitance | Ciss | 670 | 940 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Output Capacitance | Coss | 70 | 91 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 35 | 64 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 10 | mJ | VDD=25V , L=0.1mH , IAS=12A | 2 | ||
| Continuous Source Current | IS | 2.5 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 24 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP6946 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp6946-etched.step/wsp6946-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp6946.step/wsp6946.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
a86150036b942775, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).