# WSP6077

**Winsok Semicon** · MOSFETs · SOP-8

WSP6077 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; part of a dual P-ch -60V, -8A device. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; VGS rated ±20 V, threshold -1.0 to -2.5 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; part of a dual P-ch -60V, -8A device. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; VGS rated ±20 V, threshold -1.0 to -2.5 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; VDS rated -60 V, pulsed drain current -30 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, tied to pin 5; VDS rated -60 V, pulsed drain current -30 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; VDS rated -60 V, pulsed drain current -30 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, tied to pin 7; VDS rated -60 V, pulsed drain current -30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | -8 | A | -VGS @ -10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | -4.5 | A | -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM |  |  | -30 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 1.5 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 70 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 35 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | -0.02 |  | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 60 | 80 | mΩ | VGS=-10V, ID=-5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 64 | 100 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | 4.32 |  | mV/℃ | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-52V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-52V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Forward Transconductance | gfs |  | 15 |  | S | VDS=-5V, ID=-5A | 2 |
| Gate Resistance | Rg |  | 13 | 30 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (-4.5V) | Qg |  | 10 |  | nC | VDS=-30V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Source Charge | Qgs |  | 3.2 |  | nC | VDS=-30V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Drain Charge | Qgd |  | 2.5 |  | nC | VDS=-30V, VGS=-4.5V, ID=-5A | 2 |
| Turn-On Delay Time | Td(on) |  | 21 |  | ns | VDD=-30V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Rise Time | Tr |  | 19 |  | ns | VDD=-30V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Turn-Off Delay Time | Td(off) |  | 55 |  | ns | VDD=-30V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Fall Time | Tf |  | 7 |  | ns | VDD=-30V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Input Capacitance | Ciss |  | 1400 |  | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 95 |  | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 70 |  | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS |  |  | -8 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | -30 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `WSP6077`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp6077-etched.step` / `wsp6077-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp6077.step` / `wsp6077.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](docs/wsp6077-datasheet.pdf) (5 pp, sha256 `d4b70dc7af3d9c8b`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsp6077-datasheet.pdf)