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WSP6064

Public Made by Adom

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Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSP6064

Winsok Semicon · MOSFETs · SOP-8

WSP6064 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGS rated ±20 V maximum.
5 D passive Drain of the N-channel MOSFET, tied with pins 6-8; VDS rated 60 V maximum.
6 D passive Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS rated 60 V maximum.
7 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS rated 60 V maximum.
8 D passive Drain of the N-channel MOSFET, tied with pins 5-7; VDS rated 60 V maximum.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 6.8 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 4.5 A TC=70℃, VGS @ 10V 1
Pulsed Drain Current IDM 24 A 1
Single Pulse Avalanche Energy EAS 12 mJ 1
Avalanche Current IAS 16 A 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 90 ℃/W Note 1: 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 50 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 33 45 mΩ VGS=10V, ID=6.3A 2
Static Drain-Source On-Resistance RDS(ON) 37 50 mΩ VGS=4.5V, ID=4A 2
Gate Threshold Voltage VGS(th) 1 2 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.5 5 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 14 20 nC VDS=48V, VGS=10V, ID=6.3A 2
Turn-On Delay Time Td(on) 8 15 ns VDD=30V, VGEN=10V, RG=6Ω, ID=4A, RL=30Ω 2
Rise Time Tr 6 11 ns VDD=30V, VGEN=10V, RG=6Ω, ID=4A, RL=30Ω 2
Turn-Off Delay Time Td(off) 23 42 ns VDD=30V, VGEN=10V, RG=6Ω, ID=4A, RL=30Ω 2
Fall Time Tf 6 11 ns VDD=30V, VGEN=10V, RG=6Ω, ID=4A, RL=30Ω 2
Input Capacitance Ciss 670 940 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 70 91 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 35 64 pF VDS=15V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy EAS 10 mJ VDD=25V, L=0.1mH, IAS=12A 2
Continuous Source Current IS 2.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 24 A 2
Diode Forward Voltage VSD 1.1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP6064
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp6064-etched.step / wsp6064-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6064.step / wsp6064.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 07b85e8c2b91b0c4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF