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WSP6055

Winsok Semicon · MOSFETs · SOP-8

WSP6055 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS rating -55 V, continuous drain current -6.8 A at TC=25℃).
2 S passive Source of the P-channel MOSFET, tied to the same source node as the other S pins.
3 S passive Source of the P-channel MOSFET, tied to the same source node as the other S pins.
4 G input Gate of the P-channel MOSFET (VGS rating ±20 V, threshold -1.0 V min to -2.5 V max at ID=-250uA).
5 D passive Drain of the P-channel MOSFET (pulsed drain current -16 A), tied to the same drain node as the other D pins.
6 D passive Drain of the P-channel MOSFET, tied to the same drain node as the other D pins.
7 D passive Drain of the P-channel MOSFET, tied to the same drain node as the other D pins.
8 D passive Drain of the P-channel MOSFET, tied to the same drain node as the other D pins.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -55 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -6.8 A TC=25℃ 1
Continuous Drain Current ID -4.4 A TC=70℃ 1
Pulsed Drain Current IDM -16 A 1
Total Power Dissipation PD 1.25 W TC=25℃ 1
Operating/Storage Temperature Range TJ/TSTG -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 108 mΩ VGS=-10V, ID=-3.5A 2
Static Drain-Source On-Resistance RDS(ON) 125 155 mΩ VGS=-4.5V, ID=-1A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-48V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge Qg 4.6 nC VGS=-4.5V 2
Gate-Source Charge Qgs 1.4 nC VDS = -15V, ID = -1.5A, VGS = -10V 2
Gate-Drain Charge Qgd 1.6 nC VDS = -15V, ID = -1.5A, VGS = -10V 2
Turn-On Delay Time Td(on) 17 ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 2
Rise Time Tr 5.5 ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 2
Turn-Off Delay Time Td(off) 37 ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 2
Fall Time Tf 2.5 ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 2
Input Capacitance Ciss 531 pF VGS=0V, VDS= -15V, f=1MHz 2
Output Capacitance Coss 59 pF VGS=0V, VDS= -15V, f=1MHz 2
Reverse Transfer Capacitance Crss 38 pF VGS=0V, VDS= -15V, f=1MHz 2
Continuous Source Current IS -1.7 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP6055
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp6055-etched.step / wsp6055-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6055.step / wsp6055.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 1f206effddcdfdcc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF