component
WSP6055
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSP6055
Winsok Semicon · MOSFETs · SOP-8
WSP6055 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS rating -55 V, continuous drain current -6.8 A at TC=25℃). |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source node as the other S pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source node as the other S pins. |
| 4 | G | input | Gate of the P-channel MOSFET (VGS rating ±20 V, threshold -1.0 V min to -2.5 V max at ID=-250uA). |
| 5 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -16 A), tied to the same drain node as the other D pins. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -55 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6.8 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -4.4 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -16 | A | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | TC=25℃ | 1 | ||
| Operating/Storage Temperature Range | TJ/TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 108 | mΩ | VGS=-10V, ID=-3.5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 125 | 155 | mΩ | VGS=-4.5V, ID=-1A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Total Gate Charge | Qg | 4.6 | nC | VGS=-4.5V | 2 | ||
| Gate-Source Charge | Qgs | 1.4 | nC | VDS = -15V, ID = -1.5A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 1.6 | nC | VDS = -15V, ID = -1.5A, VGS = -10V | 2 | ||
| Turn-On Delay Time | Td(on) | 17 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 | ||
| Rise Time | Tr | 5.5 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 | ||
| Turn-Off Delay Time | Td(off) | 37 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 | ||
| Fall Time | Tf | 2.5 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 | ||
| Input Capacitance | Ciss | 531 | pF | VGS=0V, VDS= -15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 59 | pF | VGS=0V, VDS= -15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 38 | pF | VGS=0V, VDS= -15V, f=1MHz | 2 | ||
| Continuous Source Current | IS | -1.7 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP6055 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp6055-etched.step/wsp6055-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp6055.step/wsp6055.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
1f206effddcdfdcc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP6055
**Winsok Semicon** · MOSFETs · SOP-8
WSP6055 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS rating -55 V, continuous drain current -6.8 A at TC=25℃). |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source node as the other S pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source node as the other S pins. |
| 4 | G | input | Gate of the P-channel MOSFET (VGS rating ±20 V, threshold -1.0 V min to -2.5 V max at ID=-250uA). |
| 5 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -16 A), tied to the same drain node as the other D pins. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain node as the other D pins. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -55 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -6.8 | | | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | -4.4 | | | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM | -16 | | | A | | 1 |
| Total Power Dissipation | PD | | | 1.25 | W | TC=25℃ | 1 |
| Operating/Storage Temperature Range | TJ/TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 125 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 80 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 108 | mΩ | VGS=-10V, ID=-3.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 125 | 155 | mΩ | VGS=-4.5V, ID=-1A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-48V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 4.6 | | nC | VGS=-4.5V | 2 |
| Gate-Source Charge | Qgs | | 1.4 | | nC | VDS = -15V, ID = -1.5A, VGS = -10V | 2 |
| Gate-Drain Charge | Qgd | | 1.6 | | nC | VDS = -15V, ID = -1.5A, VGS = -10V | 2 |
| Turn-On Delay Time | Td(on) | | 17 | | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 |
| Rise Time | Tr | | 5.5 | | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 |
| Turn-Off Delay Time | Td(off) | | 37 | | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 |
| Fall Time | Tf | | 2.5 | | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 3.3 | 2 |
| Input Capacitance | Ciss | | 531 | | pF | VGS=0V, VDS= -15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 59 | | pF | VGS=0V, VDS= -15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 38 | | pF | VGS=0V, VDS= -15V, f=1MHz | 2 |
| Continuous Source Current | IS | | | -1.7 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSP6055`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp6055-etched.step` / `wsp6055-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp6055.step` / `wsp6055.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603161500521947136) (5 pp, sha256 `1f206effddcdfdcc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp6055-datasheet.pdf)