component
WSP6047
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSP6047
Winsok Semicon · MOSFETs · SOP-8
WSP6047 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the datasheet lists VDS of -60 V and continuous drain current of -4.0 A at TC=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V and the threshold voltage is -1.0 V min to -2.5 V max at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -60 V and the pulsed drain current at -20 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -2.2 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDP | -20 | A | 1 | |||
| Total Power Dissipation | PD | 2 | W | TC=25℃ | 1 | ||
| Operating/Storage Temperature Range | TJ/TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 80 | 104 | mΩ | VGS=-4.5V , ID=-3A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.74 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-60V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -4 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP6047 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp6047-etched.step/wsp6047-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp6047.step/wsp6047.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
85551b274f5ee54d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP6047
**Winsok Semicon** · MOSFETs · SOP-8
WSP6047 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the datasheet lists VDS of -60 V and continuous drain current of -4.0 A at TC=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V and the threshold voltage is -1.0 V min to -2.5 V max at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -60 V and the pulsed drain current at -20 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -4 | | | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | -2.2 | | | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDP | -20 | | | A | | 1 |
| Total Power Dissipation | PD | | | 2 | W | TC=25℃ | 1 |
| Operating/Storage Temperature Range | TJ/TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 4 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 80 | 104 | mΩ | VGS=-4.5V , ID=-3A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.74 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-60V , VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS | | | -4 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSP6047`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp6047-etched.step` / `wsp6047-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp6047.step` / `wsp6047.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588915984619356160) (5 pp, sha256 `85551b274f5ee54d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp6047-datasheet.pdf)