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WSP6024

Winsok Semicon · MOSFETs · SOP-8

WSP6024 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, connected to pins 2 and 3; the diagram shows pins 1-3 as S.
2 S passive Source of the N-channel MOSFET, connected to pins 1 and 3.
3 S passive Source of the N-channel MOSFET, connected to pins 1 and 2.
4 G input Gate of the N-channel MOSFET, rated at ±20 V gate-source maximum with a typical threshold of 2.0 V.
5 D passive Drain of the N-channel MOSFET, connected to pins 6, 7 and 8; the drain-source rating is 60 V and the continuous current is 15 A at TC=25℃.
6 D passive Drain of the N-channel MOSFET, connected to pins 5, 7 and 8; the drain-source rating is 60 V.
7 D passive Drain of the N-channel MOSFET, connected to pins 5, 6 and 8; the drain-source rating is 60 V.
8 D passive Drain of the N-channel MOSFET, connected to pins 5, 6 and 7; the drain-source rating is 60 V.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 15 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=70℃ 9.6 A VGS @ 10V, TC=70℃ 1
Pulsed Drain Current IDM 43 A Pulse width limited by max. junction temperature 1
Single Pulse Avalanche Energy EAS 81 mJ UIS tested, pulse width limited by max. junction temperature 150℃ (initial Tj=25℃) 1
Avalanche Current IAS 16 A UIS tested, pulse width limited by max. junction temperature 150℃ (initial Tj=25℃) 1
Total Power Dissipation PD@TA=25℃ 1.78 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 72 ℃/W Surface mounted on 1in2 pad area (note c) 1
Thermal Resistance Junction-Case RθJC 1.2 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 10 mΩ VGS=10V, ID=13A 2
Static Drain-Source On-Resistance RDS(ON) 11 13.7 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1 2 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=60V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP6024
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp6024-etched.step / wsp6024-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6024.step / wsp6024.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 434cdc0a39637256, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF