component
WSP4884
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSP4884
Winsok Semicon · MOSFETs · SOP-8
WSP4884 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); VDS rated 30V, continuous source current 2A. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±20V, threshold 1.5V min to 2.5V max at 250uA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); VDS rated 30V, continuous source current 2A. |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±20V, threshold 1.5V min to 2.5V max at 250uA. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6; VDS 30V max, ID 8.8A at TC=25℃. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5; VDS 30V max, ID 8.8A at TC=25℃. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8; VDS 30V max, ID 8.8A at TC=25℃. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7; VDS 30V max, ID 8.8A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18.5 | 23 | mΩ | VGS=10V, ID=8.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 27 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 1.8 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.7 | 2.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=8.8A | 2 | |
| Turn-On Delay Time | Td(on) | 6 | 8.8 | ns | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω | 2 | |
| Rise Time | Tr | 8.2 | 14 | ns | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 16 | 24 | ns | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω | 2 | |
| Fall Time | Tf | 4 | 8 | ns | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω | 2 | |
| Input Capacitance | Ciss | 580 | 701 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 95 | 112 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 57 | 91 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 18 | mJ | VDD=25V, L=0.5mH, IAS=9A | 2 | ||
| Continuous Source Current | IS | 2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 40 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 8.8 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 7 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Avalanche Current | IAS | 9 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 90 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.034 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.8 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 6 | S | VDS=5V, ID=8A | 2 | ||
| Gate-Source Charge | Qgs | 1.5 | nC | VDS=15V, VGS=4.5V, ID=8.8A | 2 | ||
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS=15V, VGS=4.5V, ID=8.8A | 2 | ||
| Reverse Recovery Time | trr | 12 | nS | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 3.5 | nC | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP4884 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp4884-etched.step/wsp4884-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp4884.step/wsp4884.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
84829dae0c2b9811, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).