component
WSP4807
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wsp4807: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
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16d ago
WSP4807
Winsok Semicon · MOSFETs · SOP-8
WSP4807 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of P-channel MOSFET 1; the datasheet gives VDSS of -30 V and VGSS of ±25 V for the device. |
| 2 | G1 | input | Gate terminal of P-channel MOSFET 1; gate-source voltage is rated ±25 V (VGSS). |
| 3 | S2 | passive | Source terminal of P-channel MOSFET 2; the datasheet gives VDSS of -30 V and VGSS of ±25 V for the device. |
| 4 | G2 | input | Gate terminal of P-channel MOSFET 2; gate-source voltage is rated ±25 V (VGSS). |
| 5 | D2 | passive | Drain terminal of P-channel MOSFET 2; drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 6 | D2 | passive | Drain terminal of P-channel MOSFET 2 (pins 5 and 6 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 7 | D1 | passive | Drain terminal of P-channel MOSFET 1 (pins 7 and 8 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 8 | D1 | passive | Drain terminal of P-channel MOSFET 1 (pins 7 and 8 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, IDS=-250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | mA | VDS=-24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -30 | mA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.3 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 15 | 21 | mW | VGS=-10V, IDS=-8.9A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 22 | 32 | mW | VGS=-4.5V, IDS=-5.6A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | ISD=-1A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | -1 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -8.9 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -7.1 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -35 | A | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA=70°C | 1 | ||
| Avalanche Current, Single pulse | IAS | 24 | A | Single pulse, L=0.1mH | 1 | ||
| Avalanche Current, Single pulse | IAS | 14 | A | Single pulse, L=0.5mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 29 | mJ | Single pulse, L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 49 | mJ | Single pulse, L=0.5mH | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 50 | °C/W | t ≤ 10s | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 90 | °C/W | Steady state | 1 | ||
| Thermal Resistance Junction to Lead | RθJL | 20 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
WSP4807 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp4807-etched.step/wsp4807-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp4807.step/wsp4807.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (7 pp, sha256
c1ee62f8c378d586, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP4807
**Winsok Semicon** · MOSFETs · SOP-8
WSP4807 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of P-channel MOSFET 1; the datasheet gives VDSS of -30 V and VGSS of ±25 V for the device. |
| 2 | G1 | input | Gate terminal of P-channel MOSFET 1; gate-source voltage is rated ±25 V (VGSS). |
| 3 | S2 | passive | Source terminal of P-channel MOSFET 2; the datasheet gives VDSS of -30 V and VGSS of ±25 V for the device. |
| 4 | G2 | input | Gate terminal of P-channel MOSFET 2; gate-source voltage is rated ±25 V (VGSS). |
| 5 | D2 | passive | Drain terminal of P-channel MOSFET 2; drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 6 | D2 | passive | Drain terminal of P-channel MOSFET 2 (pins 5 and 6 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 7 | D1 | passive | Drain terminal of P-channel MOSFET 1 (pins 7 and 8 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
| 8 | D1 | passive | Drain terminal of P-channel MOSFET 1 (pins 7 and 8 are tied together internally); drain-source voltage is rated -30 V (VDSS) and continuous drain current -8.9 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, IDS=-250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | mA | VDS=-24V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -30 | mA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.3 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 15 | 21 | mW | VGS=-10V, IDS=-8.9A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 22 | 32 | mW | VGS=-4.5V, IDS=-5.6A | 2 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | ISD=-1A, VGS=0V | 2 |
| Drain-Source Voltage | VDSS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Diode Continuous Forward Current | IS | -1 | | | A | TA=25°C | 1 |
| Continuous Drain Current | ID | -8.9 | | | A | TA=25°C | 1 |
| Continuous Drain Current | ID | -7.1 | | | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | -35 | | | A | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA=70°C | 1 |
| Avalanche Current, Single pulse | IAS | | | 24 | A | Single pulse, L=0.1mH | 1 |
| Avalanche Current, Single pulse | IAS | | | 14 | A | Single pulse, L=0.5mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 29 | mJ | Single pulse, L=0.1mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 49 | mJ | Single pulse, L=0.5mH | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 50 | °C/W | t ≤ 10s | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 90 | °C/W | Steady state | 1 |
| Thermal Resistance Junction to Lead | RθJL | | | 20 | °C/W | Steady state | 1 |
## CAD (KiCad official)
- Symbol: `WSP4807`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp4807-etched.step` / `wsp4807-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp4807.step` / `wsp4807.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586197482204237824) (7 pp, sha256 `c1ee62f8c378d586`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp4807-datasheet.pdf)