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WSP4800

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Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSP4800

Winsok Semicon · MOSFETs · SOP-8

WSP4800 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; the datasheet states VDS 40 V, VGS ±20 V, ID 6.0 A at TC=25℃ for the device.
2 G1 input Gate of N-channel MOSFET 1; VGS rated ±20 V max, threshold 1.0 V min / 2.5 V max at ID=250uA.
3 S2 passive Source of N-channel MOSFET 2; the datasheet states VDS 40 V, VGS ±20 V, ID 6.0 A at TC=25℃ for the device.
4 G2 input Gate of N-channel MOSFET 2; VGS rated ±20 V max, threshold 1.0 V min / 2.5 V max at ID=250uA.
5 D2 passive Drain of N-channel MOSFET 2; VDS max 40 V, pulsed drain current IDM 28 A.
6 D2 passive Drain of N-channel MOSFET 2 (second drain pin, tied to pin 5); VDS max 40 V, pulsed drain current IDM 28 A.
7 D1 passive Drain of N-channel MOSFET 1; VDS max 40 V, pulsed drain current IDM 28 A.
8 D1 passive Drain of N-channel MOSFET 1 (second drain pin, tied to pin 7); VDS max 40 V, pulsed drain current IDM 28 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 6 A VGS @ 10V 1
Continuous Drain Current ID@TC=70℃ 5.4 A VGS @ 10V 1
Pulsed Drain Current IDM 28 A Pulse width limited by max. junction temperature (note a) 1
Total Power Dissipation PD@TA=70℃ 1.5 W TA=70°C 1
Total Power Dissipation PD@TA=25℃ 1.28 W TA=25°C 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 110 ℃/W Surface mounted on 1in2 pad area, t=999sec (note b) 1
Thermal Resistance Junction-Case RθJC 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 32 35 mΩ VGS=10V, ID=6.0A 2
Static Drain-Source On-Resistance RDS(ON) 36 40 mΩ VGS=4.5V, ID=5.0A 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 30 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge (4.5V) Qg 7.5 nC VDS=20V, VGS=4.5V, ID=6A 2
Gate-Source Charge Qgs 3.24 nC 2
Gate-Drain Charge Qgd 2.75 nC 2
Turn-On Delay Time Td(on) 7.8 ns VDD=20V, VGEN=10V, RG=6Ω, ID=1A, RL=20Ω 2
Rise Time Tr 6.9 ns 2
Turn-Off Delay Time Td(off) 22.4 ns 2
Fall Time Tf 4.8 ns 2
Input Capacitance Ciss 815 pF VDS=20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 95 pF 2
Reverse Transfer Capacitance Crss 60 pF 2

CAD (KiCad official)

  • Symbol: WSP4800
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4800-etched.step / wsp4800-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4800.step / wsp4800.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 eb06b372d1df882b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF