component
WSP4445
Public Made by Adomby adom
Winsok Semicon MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSP4445
Winsok Semicon · MOSFETs · SO-8
WSP4445 from Winsok Semicon, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 4 | G | input | Gate terminal; VGSS is ±25 V, and the internal gate-source diode is for ESD protection only, with no gate overvoltage rating implied. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -16.7 | A | TA=25°C, VGS=-10V | 1 | ||
| Continuous Drain Current | ID | -13.3 | A | TA=70°C, VGS=-10V | 1 | ||
| Pulsed Drain Current | IDM | -66 | A | VGS=-10V | 1 | ||
| Diode Continuous Forward Current | IS | -4 | A | 1 | |||
| Avalanche Current, Single pulse | IAS | -43 | A | L=0.1mH | 1 | ||
| Avalanche Current, Single pulse | IAS | -24 | A | L=0.5mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 92 | mJ | L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 144 | mJ | L=0.5mH | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum Power Dissipation | PD | 4.2 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA=70°C | 1 | ||
| Thermal Resistance-Junction to Ambient | RqJA | 30 | °C/W | t ≤ 10s, surface mounted on 1in2 pad | 1 | ||
| Thermal Resistance-Junction to Ambient | RqJA | 75 | °C/W | Steady state, surface mounted on 1in2 pad | 1 | ||
| Thermal Resistance-Junction to Lead | RqJL | 24 | °C/W | Steady state | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, IDS=-250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | mA | VDS=-32V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -30 | mA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -10 | 10 | mA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 7 | 8.5 | mW | VGS=-20V, IDS=-16A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 7.9 | 10 | mW | VGS=-10V, IDS=-16A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 11.5 | 16 | mW | VGS=-4.5V, IDS=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.75 | -1 | V | ISD=-1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
WSP4445 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
wsp4445-etched.step/wsp4445-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp4445.step/wsp4445.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
de8a0a5484e9392d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP4445
**Winsok Semicon** · MOSFETs · SO-8
WSP4445 from Winsok Semicon, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives VDSS = -40 V and VGSS = ±25 V as absolute maximum ratings. |
| 4 | G | input | Gate terminal; VGSS is ±25 V, and the internal gate-source diode is for ESD protection only, with no gate overvoltage rating implied. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -16.7 A at TA=25°C with VGS=-10V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | | | V | | 1 |
| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | -16.7 | | | A | TA=25°C, VGS=-10V | 1 |
| Continuous Drain Current | ID | -13.3 | | | A | TA=70°C, VGS=-10V | 1 |
| Pulsed Drain Current | IDM | -66 | | | A | VGS=-10V | 1 |
| Diode Continuous Forward Current | IS | -4 | | | A | | 1 |
| Avalanche Current, Single pulse | IAS | -43 | | | A | L=0.1mH | 1 |
| Avalanche Current, Single pulse | IAS | -24 | | | A | L=0.5mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 92 | mJ | L=0.1mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 144 | mJ | L=0.5mH | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Maximum Power Dissipation | PD | | | 4.2 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 2.7 | W | TA=70°C | 1 |
| Thermal Resistance-Junction to Ambient | RqJA | | | 30 | °C/W | t ≤ 10s, surface mounted on 1in2 pad | 1 |
| Thermal Resistance-Junction to Ambient | RqJA | | | 75 | °C/W | Steady state, surface mounted on 1in2 pad | 1 |
| Thermal Resistance-Junction to Lead | RqJL | | | 24 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, IDS=-250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | mA | VDS=-32V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -30 | mA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -10 | | 10 | mA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 7 | 8.5 | mW | VGS=-20V, IDS=-16A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 7.9 | 10 | mW | VGS=-10V, IDS=-16A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 11.5 | 16 | mW | VGS=-4.5V, IDS=-10A | 2 |
| Diode Forward Voltage | VSD | | -0.75 | -1 | V | ISD=-1A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `WSP4445`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `wsp4445-etched.step` / `wsp4445-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp4445.step` / `wsp4445.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916856816349184) (6 pp, sha256 `de8a0a5484e9392d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp4445-datasheet.pdf)