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Contents

README

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WSP4435

Winsok Semicon · MOSFETs · SOP-8

WSP4435 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; VDS rated -30 V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; VDS rated -30 V.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; VDS rated -30 V.
4 G input Gate of the P-channel MOSFET, rated ±20 V gate-source with threshold of -1.5 to -2.5 V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; continuous current -8.2 A at TC=25℃.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; continuous current -8.2 A at TC=25℃.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; continuous current -8.2 A at TC=25℃.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; continuous current -8.2 A at TC=25℃.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -8.2 A VGS @ -10V, TC=25℃ 1
Continuous Drain Current ID -6.5 A VGS @ -10V, TC=70℃ 1
Pulsed Drain Current IDM -32 A 1
Single Pulse Avalanche Energy EAS 64 mJ 1
Avalanche Current IAS -16 A 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 90 ℃/W 1
Thermal Resistance Junction-Case RθJC 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS=-10V, ID=-8.2A 2
Static Drain-Source On-Resistance RDS(ON) 25 33 mΩ VGS=-4.5V, ID=-4A 2
Gate Threshold Voltage VGS(th) -1.5 -2 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy (guaranteed) EAS 49 mJ VDD=-25V, L=0.5mH, IAS=-16A 2
Continuous Source Current IS -2 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -32 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP4435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4435-etched.step / wsp4435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4435.step / wsp4435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 d86c00a915730572, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF