component

WSP4410

Public Made by Adom

by adom

Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswsp4410factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
wsp4410 / README.md
History Download
Ray Publish 0.1.0 9e7684d 6d ago

WSP4410

Winsok Semicon · MOSFETs · SOP-8

WSP4410 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGS rated ±20 V maximum.
5 D passive Drain, tied with pins 6, 7 and 8; VDS rated 30 V, continuous ID 20 A at Tc=25℃.
6 D passive Drain, tied with pins 5, 7 and 8; VDS rated 30 V, continuous ID 20 A at Tc=25℃.
7 D passive Drain, tied with pins 5, 6 and 8; VDS rated 30 V, continuous ID 20 A at Tc=25℃.
8 D passive Drain, tied with pins 5, 6 and 7; VDS rated 30 V, continuous ID 20 A at Tc=25℃.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, Tc=25℃ ID@Tc=25℃ 20 A VGS @ 10V 1
Continuous Drain Current, Tc=70℃ ID@Tc=70℃ 15.8 A VGS @ 10V 1
Pulsed Drain Current IDM 80 A 1
Single Pulse Avalanche Energy EAS 31 mJ 1
Avalanche Current IAS 25 A 1
Total Power Dissipation PD@TA=25℃ 4.2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 65 ℃/W Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 25 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4 5.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6 6.8 mΩ VGS=4.5V, ID=14A 2
Gate Threshold Voltage VGS(th) 1.3 1.8 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy (guaranteed) EAS 28 mJ VDD=25V, L=0.1mH, IAS=25A 2
Continuous Source Current IS 20 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 80 A 2
Diode Forward Voltage VSD 1.1 V VGS=0V, IS=5A, TJ=25℃ 2
Turn-On Delay Time Td(on) 14 26 ns VDD=15V, VGS=10V, RG=6Ω, ID=10A, RL=15Ω 2
Rise Time Tr 10 19 ns VDD=15V, VGS=10V, RG=6Ω, ID=10A, RL=15Ω 2
Turn-Off Delay Time Td(off) 44 80 ns VDD=15V, VGS=10V, RG=6Ω, ID=10A, RL=15Ω 2
Fall Time Tf 12 23 ns VDD=15V, VGS=10V, RG=6Ω, ID=10A, RL=15Ω 2

CAD (KiCad official)

  • Symbol: WSP4410
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4410-etched.step / wsp4410-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4410.step / wsp4410.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 e88512eb5fd1562f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF