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WSP4065

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Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSP4065

Winsok Semicon · MOSFETs · SOP-8

WSP4065 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, rated 40V, 10A continuous, 16mΩ typ RDS(ON) at VGS=10V).
2 G1 input Gate of MOSFET 1 (N-channel), VGS rated ±20V with VGS(th) 1.5V min to 2.5V max.
3 S2 passive Source of MOSFET 2 (P-channel, rated -40V, -10A continuous, 35mΩ typ RDS(ON) at VGS=-10V).
4 G2 input Gate of MOSFET 2 (P-channel), VGS rated ±20V with VGS(th) -1.3V to -2.5V.
5 D2 passive Drain of MOSFET 2 (P-channel), VDS rated -40V and pulsed drain current -30A.
6 D2 passive Drain of MOSFET 2 (P-channel), VDS rated -40V and pulsed drain current -30A.
7 D1 passive Drain of MOSFET 1 (N-channel), VDS rated 40V and pulsed drain current 30A.
8 D1 passive Drain of MOSFET 1 (N-channel), VDS rated 40V and pulsed drain current 30A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (N-Channel) BVDSS 40 V VGS=0V, ID=250uA 2
Drain-Source Breakdown Voltage (P-Channel) BVDSS -40 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 16 18 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 20 22 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 35 39 mΩ VGS=-10V, ID=-5.0A 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 40 50 mΩ VGS=-4.5V, ID=-4A 3
Gate Threshold Voltage (N-Channel) VGS(th) 1.5 1.9 2.5 V 2
Gate Threshold Voltage (P-Channel) VGS(th) -1.3 -1.8 -2.5 V 3
Drain-Source Leakage Current (N-Channel) IDSS 1 uA VDS=32V, VGS=0V, TJ=85℃ 2
Drain-Source Leakage Current (N-Channel) IDSS 30 uA VDS=32V, VGS=0V, TJ=85℃ 2
Drain-Source Leakage Current (P-Channel) IDSS -1 uA VDS=-32V, VGS=0V, TJ=85℃ 3
Drain-Source Leakage Current (P-Channel) IDSS -30 uA VDS=-32V, VGS=0V, TJ=85℃ 3
Gate-Source Leakage Current (N-Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate-Source Leakage Current (P-Channel) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Total Gate Charge (N-Channel) Qg 19 25 nC (4.5V); VDS=20V, VGS=10V, ID=6A 2
Continuous Source Current (N-Channel) IS 10 A 2
Continuous Source Current (P-Channel) IS -10 A 3
Pulsed Source Current (N-Channel) ISM 30 A VG=VD=0V, Force Current 2
Pulsed Source Current (P-Channel) ISM -30 A VG=VD=0V, Force Current 3
Diode Forward Voltage (N-Channel) VSD 1.1 V VGS=0V, IS=6A, TJ=25℃ 2
Diode Forward Voltage (P-Channel) VSD -1.1 V VGS=0V, IS=-5A, TJ=25℃ 3
Drain-Source Voltage VDS 40 V N-Channel 1
Drain-Source Voltage VDS -40 V P-Channel 1
Gate-Source Voltage VGS -20 20 V N-Channel 1
Continuous Drain Current (N-Channel) ID@TC=25℃ 10 A VGS @ 10V 1
Continuous Drain Current (P-Channel) ID@TC=25℃ -10 A VGS @ 10V 1
Continuous Drain Current (N-Channel) ID@TC=70℃ 4.8 A VGS @ 10V 1
Continuous Drain Current (P-Channel) ID@TC=70℃ -4.8 A VGS @ 10V 1
Pulsed Drain Current (N-Channel) IDM 30 A 1
Pulsed Drain Current (P-Channel) IDM -30 A 1
Single Pulse Avalanche Energy (N-Channel) EAS 28 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=11A 1
Single Pulse Avalanche Energy (P-Channel) EAS 28 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-11A 1
Avalanche Current (N-Channel) IAS 11 A 1
Avalanche Current (P-Channel) IAS 11 A 1
Total Power Dissipation (N-Channel) PD@TC=25℃ 2 W TC=25℃ 1
Total Power Dissipation (P-Channel) PD@TC=25℃ 2 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Thermal Resistance Junction-Ambient (t < 10s) RθJA 62.5 ℃/W t < 10s, surface mounted on 1 inch2 FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Ambient (Steady State) RθJA 80 ℃/W Steady state 1

CAD (KiCad official)

  • Symbol: WSP4065
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4065-etched.step / wsp4065-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4065.step / wsp4065.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (10 pp, sha256 5e0960f4a4472000, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF