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WSK78P10

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSK78P10

Winsok Semicon · MOSFETs · TO-263-2L

WSK78P10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET, rated ±20V gate-source, with RDS(ON) specified at VGS=-10V and -4.5V.
2 D passive Drain, connected to the exposed tab; rated -100V drain-source and -78A continuous at TC=25°C.
3 S passive Source; continuous source current up to -80A through the body diode.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 19 25 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250μA 2
Drain-Source Leakage Current IDSS -1 μA VDS=-100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -80 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 280 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-30A 2
Drain-Source Voltage VDS -100 V TC=25°C 1
Gate-Source Voltage VGS -20 20 V TC=25°C 1
Continuous Drain Current ID@TC=25°C -78 A VGS @ -10V 1
Continuous Drain Current ID@TC=100°C -56 A VGS @ -10V 1
Pulsed Drain Current IDM -300 A TC=25°C 1
Single Pulse Avalanche Energy EAS 174 mJ TC=25°C 1
Avalanche Current IAS -50 A TC=25°C 1
Total Power Dissipation PD 280 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-Ambient RθJA 62 °C/W 1
Thermal Resistance Junction-Case RθJC 0.65 °C/W 1
Total Gate Charge Qg 80 nC VDS=-50V, VGS=-10V, ID=-5A 2
Gate-Source Charge Qgs 15.6 nC VDS=-50V, VGS=-10V, ID=-5A 2
Gate-Drain Charge Qgd 17.2 nC VDS=-50V, VGS=-10V, ID=-5A 2
Turn-on Delay Time Td(on) 26 ns VDD=-50V, VGS=-10V, RG=6Ω, ID=-5A 2
Rise Time Tr 78 ns VDD=-50V, VGS=-10V, RG=6Ω, ID=-5A 2
Turn-off Delay Time Td(off) 210 ns VDD=-50V, VGS=-10V, RG=6Ω, ID=-5A 2
Fall Time Tf 200 ns VDD=-50V, VGS=-10V, RG=6Ω, ID=-5A 2
Input Capacitance Ciss 4230 pF VDS=-50V, VGS=0V, ƒ=1.0MHz 2
Output Capacitance Coss 388 pF VDS=-50V, VGS=0V, ƒ=1.0MHz 2
Reverse Transfer Capacitance Crss 26 pF VDS=-50V, VGS=0V, ƒ=1.0MHz 2
Reverse Recovery Time trr 208 ns IF=-5A, di/dt=100A/µs, TJ=25°C 2
Reverse Recovery Charge Qrr 560 nC IF=-5A, di/dt=100A/µs, TJ=25°C 2

CAD (KiCad official)

  • Symbol: WSK78P10
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: wsk78p10-etched.step / wsk78p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsk78p10.step / wsk78p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 34f5786894e8453a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF