component
WSK30N20G
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
WSK30N20G
Winsok Semicon · MOSFETs · TO-263-2L
WSK30N20G from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain, connected to the exposed tab (the center lead position is cut off in this 2-lead package); rated 200 V drain-source and 40 A continuous at TC=25℃. |
| 3 | S | passive | Source; the body diode carries up to 36 A continuous source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 40 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 28 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 273 | mJ | 1 | |||
| Total Power Dissipation | PD | 90 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.83 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V , ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.098 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 57 | 68 | mΩ | VGS=10V , ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 3.8 | 5 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | -4.57 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=160V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=160V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -1 | 1 | nA | VGS=±25V , VDS=0V | 2 | |
| Forward Transconductance | gfs | 32 | S | VDS=5V , ID=15A | 2 | ||
| Total Gate Charge (10V) | Qg | 53 | nC | VDS=100V , VGS=10V , ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS=100V , VGS=10V , ID=15A | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VDS=100V , VGS=10V , ID=15A | 2 | ||
| Turn-On Delay Time | Td(on) | 30 | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 | ||
| Rise Time | Tr | 20 | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 21 | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 | ||
| Fall Time | Tf | 31 | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 | ||
| Input Capacitance | Ciss | 2445 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 129 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 24 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | ||
| Continuous Source Current | IS | 36 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 150 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V , IS=12A , TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 48 | nS | IF=12A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 78 | nC | IF=12A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSK30N20G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
wsk30n20g-etched.step/wsk30n20g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsk30n20g.step/wsk30n20g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
bc292198385fcb8d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSK30N20G
**Winsok Semicon** · MOSFETs · TO-263-2L
WSK30N20G from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain, connected to the exposed tab (the center lead position is cut off in this 2-lead package); rated 200 V drain-source and 40 A continuous at TC=25℃. |
| 3 | S | passive | Source; the body diode carries up to 36 A continuous source current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 40 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 28 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 150 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 273 | mJ | | 1 |
| Total Power Dissipation | PD | | | 90 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 0.83 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS=0V , ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.098 | | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 57 | 68 | mΩ | VGS=10V , ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 3 | 3.8 | 5 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -4.57 | | mV/℃ | | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=160V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=160V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -1 | | 1 | nA | VGS=±25V , VDS=0V | 2 |
| Forward Transconductance | gfs | | 32 | | S | VDS=5V , ID=15A | 2 |
| Total Gate Charge (10V) | Qg | | 53 | | nC | VDS=100V , VGS=10V , ID=15A | 2 |
| Gate-Source Charge | Qgs | | 11 | | nC | VDS=100V , VGS=10V , ID=15A | 2 |
| Gate-Drain Charge | Qgd | | 15 | | nC | VDS=100V , VGS=10V , ID=15A | 2 |
| Turn-On Delay Time | Td(on) | | 30 | | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 |
| Rise Time | Tr | | 20 | | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 21 | | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 |
| Fall Time | Tf | | 31 | | ns | VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω | 2 |
| Input Capacitance | Ciss | | 2445 | | pF | VDS=30V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 129 | | pF | VDS=30V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 24 | | pF | VDS=30V , VGS=0V , f=1MHz | 2 |
| Continuous Source Current | IS | | | 36 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | 150 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V , IS=12A , TJ=25℃ | 2 |
| Reverse Recovery Time | trr | | 48 | | nS | IF=12A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 78 | | nC | IF=12A , dI/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSK30N20G`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `wsk30n20g-etched.step` / `wsk30n20g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsk30n20g.step` / `wsk30n20g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsk30n20g-datasheet.pdf) (6 pp, sha256 `bc292198385fcb8d`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsk30n20g-datasheet.pdf)