component
WSK150N10
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Winsok Semicon MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSK150N10
Winsok Semicon · MOSFETs · TO-263-2L
WSK150N10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±25 V maximum, with threshold VGS(th) of 2.5 V min to 4.5 V max at ID=250uA. |
| 2 | D | passive | Drain, connected to the package tab; drain-source voltage is rated 100 V and continuous drain current 150 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous source current is 80 A maximum with forward voltage of 1.3 V maximum at IS=50A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | Printed as ±25 V | 1 | |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 150 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 90 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 600 | A | TC=25°C | 1 | ||
| Avalanche Energy, Single pulse | EAS | 545 | mJ | 1 | |||
| Avalanche Current, Single pulse | IAS | 60 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 225 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec (Note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.55 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | mΩ | VGS=10V, ID=80A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 3 | 4.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V; printed as ±100 nA | 2 | |
| Gate Resistance | Rg | 0.7 | 1.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 80 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | VGS=0V, IS=50A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSK150N10 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
wsk150n10-etched.step/wsk150n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsk150n10.step/wsk150n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
c532feef05ff7a9b, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSK150N10
**Winsok Semicon** · MOSFETs · TO-263-2L
WSK150N10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±25 V maximum, with threshold VGS(th) of 2.5 V min to 4.5 V max at ID=250uA. |
| 2 | D | passive | Drain, connected to the package tab; drain-source voltage is rated 100 V and continuous drain current 150 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous source current is 80 A maximum with forward voltage of 1.3 V maximum at IS=50A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | Printed as ±25 V | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | | | 150 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | | | 90 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 600 | A | TC=25°C | 1 |
| Avalanche Energy, Single pulse | EAS | | | 545 | mJ | | 1 |
| Avalanche Current, Single pulse | IAS | | | 60 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 225 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec (Note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 0.55 | ℃/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4.2 | | mΩ | VGS=10V, ID=80A | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3 | 4.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V; printed as ±100 nA | 2 |
| Gate Resistance | Rg | | 0.7 | 1.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 80 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.3 | V | VGS=0V, IS=50A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSK150N10`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `wsk150n10-etched.step` / `wsk150n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsk150n10.step` / `wsk150n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsk150n10-datasheet.pdf) (6 pp, sha256 `c532feef05ff7a9b`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsk150n10-datasheet.pdf)