component
WSF85P06
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
WSF85P06
Winsok Semicon · MOSFETs · TO-252-2L
WSF85P06 from Winsok Semicon, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with gate threshold -1.0 V min to -3.0 V max at VGS=VDS, ID=-250uA. |
| 2 | D | passive | Drain; drain-source voltage rated -60 V with continuous drain current of -85 A at TC=25℃ and pulsed drain current of -180 A. |
| 3 | S | passive | Source; continuous source (body diode) current is -23 A and pulsed source current is -46 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -85 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -71 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -180 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 450 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 132 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 2 | mΩ | VGS=-10V, ID=-25A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 20 | mJ | VDD=-25V, L=0.1mH, IAS=-15A | 2 | ||
| Continuous Source Current | IS | -23 | A | 2 | |||
| Pulsed Source Current | ISM | -46 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.012 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.32 | mV/℃ | VGS=VDS, ID=-250uA | 2 | ||
| Forward Transconductance | gfs | 12.6 | S | VDS=-5V, ID=-18A | 2 | ||
| Gate Resistance | Rg | 2.7 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Input Capacitance | Ciss | 4068 | pF | VDS=-30V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 495 | pF | VDS=-30V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 281 | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
WSF85P06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
wsf85p06-etched.step/wsf85p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf85p06.step/wsf85p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
2e99b95603d7989f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF85P06
**Winsok Semicon** · MOSFETs · TO-252-2L
WSF85P06 from Winsok Semicon, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with gate threshold -1.0 V min to -3.0 V max at VGS=VDS, ID=-250uA. |
| 2 | D | passive | Drain; drain-source voltage rated -60 V with continuous drain current of -85 A at TC=25℃ and pulsed drain current of -180 A. |
| 3 | S | passive | Source; continuous source (body diode) current is -23 A and pulsed source current is -46 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -85 | A | -VGS @ -10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -71 | A | -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | | | -180 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 450 | mJ | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 132 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 2 | mΩ | VGS=-10V, ID=-25A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 20 | | | mJ | VDD=-25V, L=0.1mH, IAS=-15A | 2 |
| Continuous Source Current | IS | | | -23 | A | | 2 |
| Pulsed Source Current | ISM | | | -46 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.012 | | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 4.32 | | mV/℃ | VGS=VDS, ID=-250uA | 2 |
| Forward Transconductance | gfs | | 12.6 | | S | VDS=-5V, ID=-18A | 2 |
| Gate Resistance | Rg | | 2.7 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Input Capacitance | Ciss | | 4068 | | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 495 | | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 281 | | pF | VDS=-30V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `WSF85P06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `wsf85p06-etched.step` / `wsf85p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf85p06.step` / `wsf85p06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603384102632501248) (6 pp, sha256 `2e99b95603d7989f`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf85p06-datasheet.pdf)