component
WSF6032
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSF6032
Winsok Semicon · MOSFETs · TO-252-4L
WSF6032 from Winsok Semicon, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first MOSFET channel; the datasheet gives no pin-specific limit, so the device ratings apply (VGS ±20 V, VDS 60 V N-channel / -60 V P-channel). |
| 2 | G1 | input | Gate terminal of the first MOSFET channel; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 3 | D1/D2 | passive | Drain connection shown on pin 3 for both D1 and D2, so this pin is common to both channels; drain-source voltage is rated 60 V (N-channel) and -60 V (P-channel). |
| 4 | S2 | passive | Source terminal of the second MOSFET channel; the datasheet gives no pin-specific limit, so the device ratings apply (VGS ±20 V, VDS 60 V N-channel / -60 V P-channel). |
| 5 | G2 | input | Gate terminal of the second MOSFET channel; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-4L |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 60 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -60 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TC=25℃ | 40 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TC=25℃ | -35 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TC=70℃ | 16 | A | TC=70℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TC=70℃ | -14 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 120 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -105 | A | 1 | |||
| Total Power Dissipation (N-Channel) | PD@TC=25℃ | 20.8 | W | TC=25℃ | 1 | ||
| Total Power Dissipation (P-Channel) | PD@TC=25℃ | 20.8 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | Junction-Ambient, note 1 | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 13.5 | 15.5 | mΩ | VGS=10V , ID=20A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 18.5 | 22 | mΩ | VGS=4.5V , ID=20A | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.3 | 1.6 | 2.5 | V | 2 | |
| Drain-Source Leakage Current (N-Channel, TJ=25℃) | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel, TJ=55℃) | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Turn-On Delay Time (N-Channel) | Td(on) | 6 | 11 | ns | VDD=30V , VGS=10V , RG=6, ID=1A | 2 | |
| Input Capacitance (N-Channel) | Ciss | 1650 | 1815 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | |
| Continuous Source Current (N-Channel) | IS | 20 | A | 2 | |||
| Pulsed Source Current (N-Channel) | ISM | 60 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 1.4 | V | VGS=0V , IS=1.7A,TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -60 | V | VGS=0V , ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 31 | 35 | mΩ | VGS=-10V , ID=-20A | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.3 | -2.5 | V | 3 | ||
| Drain-Source Leakage Current (P-Channel, TJ=25℃) | IDSS | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Channel, TJ=55℃) | IDSS | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 3 | |
| Rise Time (P-Channel) | Tr | 12 | 22 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-1A, | 3 | |
| Turn-Off Delay Time (P-Channel) | Td(off) | 12 | 22 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-1A, | 3 | |
| Total Gate Charge (P-Channel) | Qg | 23.7 | 33.2 | nC | VDS=-30V , VGS=-10 , ID=-7A | 3 | |
| Input Capacitance (P-Channel) | Ciss | 2270 | 2520 | pF | VDS=-30V , VGS=0V , f=1MHz | 3 | |
| Continuous Source Current (P-Channel) | IS | -15 | A | 3 | |||
| Pulsed Source Current (P-Channel) | ISM | -50 | A | VG=VD=0V , Force Current | 3 | ||
| Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 | ||
| Drain-Source Breakdown Voltage Temperature Coefficient (N-Channel) | △BVDSS/△TJ | 0.063 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient (N-Channel) | △VGS(th) | -5.24 | mV/℃ | VGS=VDS , ID =250uA | 2 | ||
| Forward Transconductance (N-Channel) | gfs | 21 | S | VDS=5V , ID=8A | 2 | ||
| Gate Resistance (N-Channel) | Rg | 2.8 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Gate-Source Charge (N-Channel) | Qgs | 1.7 | nC | VDS=30V , VGS=10V , ID=7A | 2 | ||
| Gate-Drain Charge (N-Channel) | Qgd | 2 | nC | VDS=30V , VGS=10V , ID=7A | 2 | ||
| Output Capacitance (N-Channel) | Coss | 110 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance (N-Channel) | Crss | 96 | pF | VDS=30V , VGS=0V , f=1MHz | 2 | ||
| Drain-Source Breakdown Voltage Temperature Coefficient (P-Channel) | △BVDSS/△TJ | -0.03 | V/℃ | Reference to 25℃ , ID=-1mA | 3 | ||
| VGS(th) Temperature Coefficient (P-Channel) | △VGS(th) | 4.56 | mV/℃ | VGS=VDS , ID =-250uA | 3 | ||
| Forward Transconductance (P-Channel) | gfs | 15 | S | VDS=-5V , ID=-4.5A | 3 | ||
| Gate-Source Charge (P-Channel) | Qgs | 3.6 | nC | VDS=-30V , VGS=-10 , ID=-7A | 3 | ||
| Gate-Drain Charge (P-Channel) | Qgd | 4.9 | nC | VDS=-30V , VGS=-10 , ID=-7A | 3 | ||
| Output Capacitance (P-Channel) | Coss | 119 | pF | VDS=-30V , VGS=0V , f=1MHz | 3 | ||
| Reverse Transfer Capacitance (P-Channel) | Crss | 96 | pF | VDS=-30V , VGS=0V , f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
WSF6032 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
wsf6032-etched.step/wsf6032-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf6032.step/wsf6032.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (13 pp, sha256
043adf15f5d5c324, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).