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Ray wsf4n65: specified limits as data (metadata.characteristics, 35 rows from the datasheet) fe490bb 17d ago

WSF4N65

Winsok Semicon · MOSFETs · TO-252

WSF4N65 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±30 V maximum, VGS(th) 2.0 to 4.0 V and IGSS of ±100 nA maximum at VGS=±30 V.
2 D passive Drain, also the exposed tab; rated for VDS of 650 V and continuous ID of 4 A at TC=25℃ (16 A pulsed).
3 S passive Source; the body diode runs from source to drain, with continuous source current IS of 4 A maximum and VSD of 1.4 V maximum.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current, VGS @ 10V (TC=25℃) ID 4 A TC=25℃ 1
Continuous Drain Current, VGS @ 10V (TC=100℃) ID 2.5 A TC=100℃ 1
Pulsed Drain Current IDM 16 A 1
Single Pulse Avalanche Energy EAS 128 mJ 1
Total Power Dissipation PD 77 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.62 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.6 V/℃ Reference to 25℃, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.6 3 Ω VGS=10V, ID=3.5A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS, ID=250uA 2
VGS(th) Temperature Coefficient △VGS(th) -4.57 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=520V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0V 2
Forward Transconductance gfs 5 S VDS=40V, ID=3.5A 2
Total Gate Charge (10V) Qg 10.2 nC VDS=520V, VGS=10V, ID=7A 2
Gate-Source Charge Qgs 2.3 nC 2
Gate-Drain Charge Qgd 2.1 nC 2
Turn-On Delay Time Td(on) 15.5 ns VDD=300V, VGS=10V, RG=25Ω, ID=10A 2
Rise Time Tr 13 ns 2
Turn-Off Delay Time Td(off) 40 ns 2
Fall Time Tf 16 ns 2
Input Capacitance Ciss 550 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 46 pF 2
Reverse Transfer Capacitance Crss 2.3 pF 2
Continuous Source Current IS 4 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 16 A 2
Diode Forward Voltage VSD 1.4 V VGS=0V, IS=7A, TJ=25℃ 2
Reverse Recovery Time trr 454 nS IF=7A, dI/dt=40A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 2076 nC 2

CAD (KiCad official)

  • Symbol: WSF4N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf4n65-etched.step / wsf4n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf4n65.step / wsf4n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 ff1ab2c0eb988c66, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF