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WSF45P06

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSF45P06

Winsok Semicon · MOSFETs · TO-252

WSF45P06 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with gate threshold voltage of -1.0 V min to -2.5 V max at ID=-250uA.
2 D passive Drain (also the metal tab); drain-source voltage rated -60 V, continuous drain current -45 A at TC=25℃ and pulsed -90 A.
3 S passive Source; continuous source current is limited to -23 A and pulsed source current to -46 A through the body diode.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, -VGS @ -10V ID@TC=25℃ -45 A TC=25℃ 1
Continuous Drain Current, -VGS @ -10V ID@TC=100℃ -38 A TC=100℃ 1
Pulsed Drain Current IDM -90 A 1
Single Pulse Avalanche Energy EAS 66 mJ 1
Avalanche Current IAS -27.2 A 1
Total Power Dissipation PD@TC=25℃ 31.3 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 30 40 mΩ VGS=-10V, ID=-18A 2
Static Drain-Source On-Resistance RDS(ON) 52 65 mΩ VGS=-4.5V, ID=-12A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V 2
Drain-Source Leakage Current IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 13 16 Ω VDS=0V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy EAS 20 mJ VDD=-25V, L=0.1mH, IAS=-15A 2
Continuous Source Current IS -23 A 2
Pulsed Source Current ISM -46 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF45P06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf45p06-etched.step / wsf45p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf45p06.step / wsf45p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 c1a8e5baeafd2c6d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF