component
WSF40N15
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSF40N15
Winsok Semicon · MOSFETs · TO-252-2L
WSF40N15 from Winsok Semicon, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input of the N-channel MOSFET, rated for a maximum gate-source voltage of ±25 V. |
| 2 | D | passive | Drain terminal, rated for 150 V drain-source voltage and 40 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal, with a continuous source current rating of 20 A and a pulsed source current of 65 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 40 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 23 | A | TC=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 105 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 42 | mJ | 1 | |||
| Avalanche Current | IAS | 13 | A | 1 | |||
| Total Power Dissipation | PD | 113 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 45 | W | TC=100℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.1 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.098 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 40 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 60 | mΩ | VGS=6.0V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | -4.57 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=120V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 30 | uA | VDS=120V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1 | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 65 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=10A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS=5V, ID=8A | 2 | ||
| Total Gate Charge | Qg | 42 | nC | VDS=75V, VGS=10V, ID=16A | 2 | ||
| Gate-Source Charge | Qgs | 18 | nC | VDS=75V, VGS=10V, ID=16A | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDS=75V, VGS=10V, ID=16A | 2 | ||
| Turn-On Delay Time | Td(on) | 22 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 | ||
| Rise Time | Tr | 8 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 42 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 | ||
| Fall Time | Tf | 18 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 | ||
| Input Capacitance | Ciss | 2610 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 210 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 70 | pF | VDS=30V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 89 | nS | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 200 | nC | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSF40N15 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
wsf40n15-etched.step/wsf40n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf40n15.step/wsf40n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (7 pp, sha256
a70ab81863fb3692, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF40N15
**Winsok Semicon** · MOSFETs · TO-252-2L
WSF40N15 from Winsok Semicon, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input of the N-channel MOSFET, rated for a maximum gate-source voltage of ±25 V. |
| 2 | D | passive | Drain terminal, rated for 150 V drain-source voltage and 40 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal, with a continuous source current rating of 20 A and a pulsed source current of 65 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 150 | V | | 1 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | | | 40 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 23 | A | TC=100℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 5 | A | TA=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 4 | A | TA=70℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 105 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 42 | mJ | | 1 |
| Avalanche Current | IAS | | | 13 | A | | 1 |
| Total Power Dissipation | PD | | | 113 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD | | | 45 | W | TC=100℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.1 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V, ID=250uA | 2 |
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.098 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 32 | 40 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 40 | 60 | mΩ | VGS=6.0V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | | -4.57 | | mV/℃ | | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=120V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 30 | uA | VDS=120V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 1 | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 20 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 65 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, IS=10A, TJ=25℃ | 2 |
| Forward Transconductance | gfs | | 30 | | S | VDS=5V, ID=8A | 2 |
| Total Gate Charge | Qg | | 42 | | nC | VDS=75V, VGS=10V, ID=16A | 2 |
| Gate-Source Charge | Qgs | | 18 | | nC | VDS=75V, VGS=10V, ID=16A | 2 |
| Gate-Drain Charge | Qgd | | 9 | | nC | VDS=75V, VGS=10V, ID=16A | 2 |
| Turn-On Delay Time | Td(on) | | 22 | | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 |
| Rise Time | Tr | | 8 | | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 42 | | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 |
| Fall Time | Tf | | 18 | | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 |
| Input Capacitance | Ciss | | 2610 | | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 210 | | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 70 | | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr | | 89 | | nS | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 200 | | nC | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSF40N15`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `wsf40n15-etched.step` / `wsf40n15-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf40n15.step` / `wsf40n15.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsf40n15-datasheet.pdf) (7 pp, sha256 `a70ab81863fb3692`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf40n15-datasheet.pdf)