component
WSF40N10A
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Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSF40N10A
Winsok Semicon · MOSFETs · TO-252
WSF40N10A from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold of 1.5 V (0.9 to 2.5 V) at ID=250uA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is rated at 100 V, with continuous current of 31 A at TC=25℃ and pulsed current of 55 A. |
| 3 | S | passive | Source; the body diode carries a continuous source current of 12 A, with forward voltage of 1.3 V max at IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance (VGS=10V) | RDS(ON) | 42 | 55 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance (VGS=5.0V) | RDS(ON) | 58 | 85 | mΩ | VGS=5.0V, ID=8A | 2 | |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 10 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 100 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Total Gate Charge (10V) | Qg | 13.5 | 22 | nC | VDS=80V, VGS=10V, ID=12A | 2 | |
| Continuous Source Current | IS | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -100 | 100 | V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current at TC=25℃ | ID | 31 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current at TC=100℃ | ID | 22 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 55 | A | 1 | |||
| Total Power Dissipation at TC=25℃ | PD | 52.1 | W | TC=25℃ | 1 | ||
| Total Power Dissipation at TA=25℃ | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
WSF40N10A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf40n10a-etched.step/wsf40n10a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf40n10a.step/wsf40n10a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
405ac8a740d7c3f9, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF40N10A
**Winsok Semicon** · MOSFETs · TO-252
WSF40N10A from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold of 1.5 V (0.9 to 2.5 V) at ID=250uA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is rated at 100 V, with continuous current of 31 A at TC=25℃ and pulsed current of 55 A. |
| 3 | S | passive | Source; the body diode carries a continuous source current of 12 A, with forward voltage of 1.3 V max at IS=1A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance (VGS=10V) | RDS(ON) | | 42 | 55 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance (VGS=5.0V) | RDS(ON) | | 58 | 85 | mΩ | VGS=5.0V, ID=8A | 2 |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | | | 10 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (TJ=55℃) | IDSS | | | 100 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Total Gate Charge (10V) | Qg | | 13.5 | 22 | nC | VDS=80V, VGS=10V, ID=12A | 2 |
| Continuous Source Current | IS | | | 12 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -100 | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current at TC=25℃ | ID | | | 31 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current at TC=100℃ | ID | | | 22 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 55 | A | | 1 |
| Total Power Dissipation at TC=25℃ | PD | | | 52.1 | W | TC=25℃ | 1 |
| Total Power Dissipation at TA=25℃ | PD | | | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.4 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `WSF40N10A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wsf40n10a-etched.step` / `wsf40n10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf40n10a.step` / `wsf40n10a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588893920109871104) (6 pp, sha256 `405ac8a740d7c3f9`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf40n10a-datasheet.pdf)