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WSF40N10

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSF40N10

Winsok Semicon · MOSFETs · TO-252-2(DPAK)

WSF40N10 from Winsok Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20 V maximum, with a typical threshold of 3.0 V (2.0 to 4.0 V) at ID=250uA.
2 D passive Drain, which is also connected to the tab; the drain-source voltage is rated at 100 V and continuous current is 40 A at TC=25℃.
3 S passive Source; the continuous body-diode source current is 12 A max and the pulsed source current is 45 A max.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 40 A 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 30 A 1
Continuous Drain Current, VGS @ 10V ID@TA=25℃ 4.2 A 1
Continuous Drain Current, VGS @ 10V ID@TA=70℃ 3.4 A 1
Pulsed Drain Current IDM 45 A 1
Single Pulse Avalanche Energy EAS 43.3 mJ 1
Avalanche Current IAS 27 A 1
Total Power Dissipation PD@TC=25℃ 52.1 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 32 38 mΩ VGS=10V , ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 40 58 mΩ VGS=6.0V , ID=15A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 1.6 3.2 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (10V) Qg 60 84 nC VDS=80V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 9.7 14 nC 2
Gate-Drain Charge Qgd 11.8 16.5 nC 2
Turn-On Delay Time Td(on) 10.4 21 ns VDD=50V , VGS=10V , RG=3.3Ω ID=20A 2
Rise Time Tr 46 83 ns 2
Turn-Off Delay Time Td(off) 54 108 ns 2
Fall Time Tf 10 20 ns 2
Input Capacitance Ciss 3848 5387 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 137 192 pF 2
Reverse Transfer Capacitance Crss 82 115 pF 2
Single Pulse Avalanche Energy EAS 13.4 mJ VDD=25V , L=0.1mH , IAS=15A 2
Continuous Source Current IS 12 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 45 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF40N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: wsf40n10-etched.step / wsf40n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf40n10.step / wsf40n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 d43ee45548f8ed13, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF