component
WSF4022
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSF4022
Winsok Semicon · MOSFETs · TO-252-4
WSF4022 from Winsok Semicon, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel), the first lead from the left in the pin configuration drawing. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20V with a typical threshold of 1.6V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel), the third lead from the left in the pin configuration drawing. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20V with a typical threshold of 1.6V. |
| 5 | D1/D2 | passive | Exposed tab common to the drains of both MOSFETs (D1 and D2 tied together), rated 40V drain-source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current (Continuous) | ID | 20 | A | TC=25°C; Note *: limited by package | 1 | ||
| Drain Current (Continuous) | ID | 19.7 | A | TC=100°C | 1 | ||
| Drain Current (Continuous) | ID | 12.2 | A | TA=25°C | 1 | ||
| Drain Current (Continuous) | ID | 10.2 | A | TA=70°C | 1 | ||
| Drain Current (Continuous), steady state | ID | 6.4 | A | Steady State, TA=25°C | 1 | ||
| Drain Current (Continuous), steady state | ID | 4.2 | A | Steady State, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Note *: limited by package | 1 | ||
| Single Pulse Avalanche Energy | EAS | 60 | mJ | TC=25°C, L=0.5mH | 1 | ||
| Operating Temperature / Storage Temperature | TJ/TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 3.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 32V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | VDS = 32V, VGS = 0V, TJ=85°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.6 | 2.5 | V | VGS = VDS, IDS = 250µA | 2 |
| Drain-Source On-state Resistance | RDS(on) | 16 | 21 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Drain-Source On-state Resistance | RDS(on) | 18 | 25 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.1 | V | ISD=1A, VGS=0V | 2 | |
| Reverse Recovery Time (datasheet label: Input Capacitance) | trr | 13 | ns | IDS=10A, dlSD/dt=100A/µs | 2 | ||
| Reverse Recovery Charge (datasheet label: Output Capacitance) | Qrr | 8.7 | nC | IDS=10A, dlSD/dt=100A/µs | 2 | ||
| Total Gate Charge | Qg | 7.5 | nC | VDS=20V,VGS=4.5V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 3.24 | nC | VDS=20V,VGS=4.5V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 2.75 | nC | VDS=20V,VGS=4.5V, ID=10A | 2 | ||
| Input Capacitance | Ciss | 815 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 95 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 60 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | ||
| Turn-on Delay Time | td(on) | 7.8 | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 | ||
| Turn-on Rise Time | tr | 6.9 | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 | ||
| Turn-off Delay Time | td(off) | 22.4 | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 | ||
| Turn-off Fall Time | tf | 4.8 | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 |
CAD (KiCad official)
- Symbol:
WSF4022 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
wsf4022-etched.step/wsf4022-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf4022.step/wsf4022.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (8 pp, sha256
6c00d8c5aa908f65, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF4022
**Winsok Semicon** · MOSFETs · TO-252-4
WSF4022 from Winsok Semicon, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel), the first lead from the left in the pin configuration drawing. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20V with a typical threshold of 1.6V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel), the third lead from the left in the pin configuration drawing. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20V with a typical threshold of 1.6V. |
| 5 | D1/D2 | passive | Exposed tab common to the drains of both MOSFETs (D1 and D2 tied together), rated 40V drain-source. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current (Continuous) | ID | | | 20 | A | TC=25°C; Note *: limited by package | 1 |
| Drain Current (Continuous) | ID | | | 19.7 | A | TC=100°C | 1 |
| Drain Current (Continuous) | ID | | | 12.2 | A | TA=25°C | 1 |
| Drain Current (Continuous) | ID | | | 10.2 | A | TA=70°C | 1 |
| Drain Current (Continuous), steady state | ID | | | 6.4 | A | Steady State, TA=25°C | 1 |
| Drain Current (Continuous), steady state | ID | | | 4.2 | A | Steady State, TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 80 | A | Note *: limited by package | 1 |
| Single Pulse Avalanche Energy | EAS | | | 60 | mJ | TC=25°C, L=0.5mH | 1 |
| Operating Temperature / Storage Temperature | TJ/TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 3.8 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 32V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | VDS = 32V, VGS = 0V, TJ=85°C | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.6 | 2.5 | V | VGS = VDS, IDS = 250µA | 2 |
| Drain-Source On-state Resistance | RDS(on) | | 16 | 21 | mΩ | VGS = 10V, ID = 10A | 2 |
| Drain-Source On-state Resistance | RDS(on) | | 18 | 25 | mΩ | VGS = 4.5V, ID = 5A | 2 |
| Diode Forward Voltage | VSD | | 0.75 | 1.1 | V | ISD=1A, VGS=0V | 2 |
| Reverse Recovery Time (datasheet label: Input Capacitance) | trr | | 13 | | ns | IDS=10A, dlSD/dt=100A/µs | 2 |
| Reverse Recovery Charge (datasheet label: Output Capacitance) | Qrr | | 8.7 | | nC | IDS=10A, dlSD/dt=100A/µs | 2 |
| Total Gate Charge | Qg | | 7.5 | | nC | VDS=20V,VGS=4.5V, ID=10A | 2 |
| Gate-Source Charge | Qgs | | 3.24 | | nC | VDS=20V,VGS=4.5V, ID=10A | 2 |
| Gate-Drain Charge | Qgd | | 2.75 | | nC | VDS=20V,VGS=4.5V, ID=10A | 2 |
| Input Capacitance | Ciss | | 815 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Output Capacitance | Coss | | 95 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 60 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Turn-on Delay Time | td(on) | | 7.8 | | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 |
| Turn-on Rise Time | tr | | 6.9 | | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 |
| Turn-off Delay Time | td(off) | | 22.4 | | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 |
| Turn-off Fall Time | tf | | 4.8 | | ns | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 2 |
## CAD (KiCad official)
- Symbol: `WSF4022`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `wsf4022-etched.step` / `wsf4022-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf4022.step` / `wsf4022.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916889200300032) (8 pp, sha256 `6c00d8c5aa908f65`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf4022-datasheet.pdf)