component
WSF4012
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wsf4012: specified limits as data (metadata.characteristics, 60 rows from the datasheet)
2 files changed
+795−1
README.md+67@@ -23,6 +23,73 @@ WSF4012 from Winsok Semicon, in a TO-252-4. Pinout and pin descriptions extracte | Category | Transistors/Thyristors | | Pins | 5 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| N-ch Drain-Source Voltage | VDS | | | 40 | V | | 1 |+| P-ch Drain-Source Voltage | VDS | | | -40 | V | | 1 |+| N-ch Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| P-ch Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| N-ch Continuous Drain Current | ID@TC=25℃ | | | 30 | A | TC=25℃, VGS @ 10V | 1 |+| P-ch Continuous Drain Current | ID@TC=25℃ | | | -20 | A | TC=25℃, VGS @ 10V | 1 |+| N-ch Continuous Drain Current | ID@TC=100℃ | | | 20 | A | TC=100℃, VGS @ 10V | 1 |+| P-ch Continuous Drain Current | ID@TC=100℃ | | | -16 | A | TC=100℃, VGS @ 10V | 1 |+| N-ch Pulsed Drain Current | IDM | | | 46 | A | | 1 |+| P-ch Pulsed Drain Current | IDM | | | -40 | A | | 1 |+| N-ch Single Pulse Avalanche Energy | EAS | | | 28 | mJ | | 1 |+| P-ch Single Pulse Avalanche Energy | EAS | | | 66 | mJ | | 1 |+| N-ch Avalanche Current | IAS | | | 17.8 | A | | 1 |+| P-ch Avalanche Current | IAS | | | -27.2 | A | | 1 |+| N-ch Total Power Dissipation | PD@TC=25℃ | | | 25 | W | TC=25℃ | 1 |+| P-ch Total Power Dissipation | PD@TC=25℃ | | | 31.3 | W | TC=25℃ | 1 |+| N-ch Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| P-ch Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| N-ch Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |+| P-ch Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 |+| Thermal Resistance Junction-Case | RθJC | | | 5 | ℃/W | 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 |+| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250uA | 2 |+| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 16 | 21 | mΩ | VGS=10V, ID=12A | 2 |+| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 18 | 25 | mΩ | VGS=4.5V, ID=10A | 2 |+| N-ch Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | | 2 |+| N-ch Drain-Source Leakage Current (TJ=25℃) | IDSS | | | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |+| N-ch Drain-Source Leakage Current (TJ=55℃) | IDSS | | | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |+| N-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| N-ch Gate Resistance | Rg | | 2.6 | 5.2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |+| N-ch Single Pulse Avalanche Energy | EAS | 9 | | | mJ | VDD=25V, L=0.1mH, IAS=10A | 2 |+| N-ch Continuous Source Current | IS | | | 23 | A | | 2 |+| N-ch Pulsed Source Current | ISM | | | 46 | A | VG=VD=0V, Force Current | 2 |+| N-ch Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |+| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 3 |+| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 30 | 38 | mΩ | VGS=-10V, ID=-8A | 3 |+| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 46 | 62 | mΩ | VGS=-4.5V, ID=-4A | 3 |+| P-ch Gate Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | | 3 |+| P-ch Drain-Source Leakage Current (TJ=25℃) | IDSS | | | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |+| P-ch Drain-Source Leakage Current (TJ=55℃) | IDSS | | | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |+| P-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |+| P-ch Gate Resistance | Rg | | 13 | 16 | Ω | VDS=0V, VGS=0V, f=1MHz | 3 |+| P-ch Single Pulse Avalanche Energy | EAS | 20 | | | mJ | VDD=-25V, L=0.1mH, IAS=-15A | 3 |+| P-ch Continuous Source Current | IS | | | -20 | A | | 3 |+| P-ch Pulsed Source Current | ISM | | | -40 | A | VG=VD=0V, Force Current | 3 |+| P-ch Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |+| N-ch Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.034 | | V/℃ | Reference to 25℃, ID=1mA | 2 |+| N-ch Gate Threshold Voltage Temperature Coefficient | ΔVGS(th) | | -4.56 | | mV/℃ | VGS=VDS, ID=250uA | 2 |+| N-ch Forward Transconductance | gfs | | 8 | | S | VDS=5V, ID=12A | 2 |+| N-ch Total Gate Charge (4.5V) | Qg | | 5.5 | | nC | VDS=20V, VGS=4.5V, ID=12A | 2 |+| N-ch Input Capacitance | Ciss | | 593 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |+| N-ch Output Capacitance | Coss | | 76 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |+| N-ch Reverse Transfer Capacitance | Crss | | 56 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |+| P-ch Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | -0.012 | | V/℃ | Reference to 25℃, ID=-1mA | 3 |+| P-ch Gate Threshold Voltage Temperature Coefficient | ΔVGS(th) | | 4.32 | | mV/℃ | VGS=VDS, ID=-250uA | 3 |+| P-ch Forward Transconductance | gfs | | 12.6 | | S | VDS=-5V, ID=-8A | 3 |+| P-ch Total Gate Charge (-4.5V) | Qg | | 9 | | nC | VDS=-20V, VGS=-4.5V, ID=-12A | 3 |+| P-ch Input Capacitance | Ciss | | 1004 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |+| P-ch Output Capacitance | Coss | | 108 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |+| P-ch Reverse Transfer Capacitance | Crss | | 80 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |+ ## CAD (KiCad official) - Symbol: `WSF4012`
page.json+728−1@@ -160,6 +160,733 @@ "Package": "TO-252-4", "Category": "Transistors/Thyristors", "Pins": "5"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "cd65df5d30142a21",+ "rows": [+ {+ "name": "N-ch Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Continuous Drain Current",+ "symbol": "ID@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC=25℃, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Continuous Drain Current",+ "symbol": "ID@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "TC=25℃, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Continuous Drain Current",+ "symbol": "ID@TC=100℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TC=100℃, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Continuous Drain Current",+ "symbol": "ID@TC=100℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -16,+ "conditions": "TC=100℃, VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 46,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 66,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 17.8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -27.2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Total Power Dissipation",+ "symbol": "PD@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Total Power Dissipation",+ "symbol": "PD@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 31.3,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "P-ch Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "1 inch2 FR-4 board, 2OZ copper (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "1 inch2 FR-4 board, 2OZ copper (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16,+ "max": 21,+ "conditions": "VGS=10V, ID=12A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 25,+ "conditions": "VGS=4.5V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.5,+ "typ": 2,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-Source Leakage Current (TJ=25℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=32V, VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-Source Leakage Current (TJ=55℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=32V, VGS=0V, TJ=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.6,+ "max": 5.2,+ "conditions": "VDS=0V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": 9,+ "typ": null,+ "max": null,+ "conditions": "VDD=25V, L=0.1mH, IAS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Continuous Source Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 23,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Pulsed Source Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 46,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=1A, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 30,+ "max": 38,+ "conditions": "VGS=-10V, ID=-8A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 46,+ "max": 62,+ "conditions": "VGS=-4.5V, ID=-4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.5,+ "typ": -2,+ "max": -2.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-Source Leakage Current (TJ=25℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=-32V, VGS=0V, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-Source Leakage Current (TJ=55℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=-32V, VGS=0V, TJ=55℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 13,+ "max": 16,+ "conditions": "VDS=0V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDD=-25V, L=0.1mH, IAS=-15A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Continuous Source Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Pulsed Source Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS=0V, IS=-1A, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "N-ch Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/℃",+ "min": null,+ "typ": 0.034,+ "max": null,+ "conditions": "Reference to 25℃, ID=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate Threshold Voltage Temperature Coefficient",+ "symbol": "ΔVGS(th)",+ "kind": "temperature_coefficient",+ "unit": "mV/℃",+ "min": null,+ "typ": -4.56,+ "max": null,+ "conditions": "VGS=VDS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDS=5V, ID=12A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Total Gate Charge (4.5V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.5,+ "max": null,+ "conditions": "VDS=20V, VGS=4.5V, ID=12A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 593,+ "max": null,+ "conditions": "VDS=15V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 76,+ "max": null,+ "conditions": "VDS=15V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 56,+ "max": null,+ "conditions": "VDS=15V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/℃",+ "min": null,+ "typ": -0.012,+ "max": null,+ "conditions": "Reference to 25℃, ID=-1mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate Threshold Voltage Temperature Coefficient",+ "symbol": "ΔVGS(th)",+ "kind": "temperature_coefficient",+ "unit": "mV/℃",+ "min": null,+ "typ": 4.32,+ "max": null,+ "conditions": "VGS=VDS, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 12.6,+ "max": null,+ "conditions": "VDS=-5V, ID=-8A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Total Gate Charge (-4.5V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VDS=-20V, VGS=-4.5V, ID=-12A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1004,+ "max": null,+ "conditions": "VDS=-15V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 108,+ "max": null,+ "conditions": "VDS=-15V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-ch Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 80,+ "max": null,+ "conditions": "VDS=-15V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -201,4 +928,4 @@ "visibility": { "public": true }-}+}