component
WSF38P10
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wsf38p10-etched.glb | 17d ago |
| wsf38p10-etched.step | 17d ago |
| wsf38p10-hero.glb | 17d ago |
| wsf38p10-hero.overlay.json | 17d ago |
| wsf38p10.glb | 17d ago |
| wsf38p10.kicad_mod | 17d ago |
| wsf38p10.kicad_sym | 17d ago |
| wsf38p10.lbr | 17d ago |
| wsf38p10.step | 17d ago |
WSF38P10
Winsok Semicon · MOSFETs · TO-252
WSF38P10 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, with a threshold of -1.2 V to -2.5 V and gate leakage up to ±100 nA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated -100 V and continuous drain current -30 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is limited to -18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC=25℃) | ID@TC=25℃ | -30 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current (TC=100℃) | ID@TC=100℃ | -15 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -75 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 157 | mJ | 1 | |||
| Avalanche Current | IAS | -18.9 | A | 1 | |||
| Total Power Dissipation (TC=25℃) | PD@TC=25℃ | 54 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 95 | mΩ | VGS=-10V , ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | 2 | |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 100 | mJ | VDD=-25V , L=0.5mH , IAS=-10A | 2 | ||
| Continuous Source Current | IS | -18 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSF38P10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf38p10-etched.step/wsf38p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf38p10.step/wsf38p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
885f3772ba480d87, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).