main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers wsf3085: viewers · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
wsf3085-etched.glb Publish 0.1.0 · Ray 7d ago
wsf3085-etched.step wsf3085: factory component page (tier=lcsc) · Ray 7d ago
wsf3085-hero.glb wsf3085: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
wsf3085-hero.overlay.json Publish 0.1.0 · Ray 7d ago
wsf3085.glb Publish 0.1.0 · Ray 7d ago
wsf3085.kicad_mod Publish 0.1.0 · Ray 7d ago
wsf3085.kicad_sym Publish 0.1.0 · Ray 7d ago
wsf3085.lbr Publish 0.1.0 · Ray 7d ago
wsf3085.step Publish 0.1.0 · Ray 7d ago

WSF3085

Winsok Semicon · MOSFETs · TO-252

WSF3085 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.0 to 2.5 V.
2 D passive Drain, also connected to the tab; VDS max 30 V, continuous drain current 85 A at TC=25℃.
3 S passive Source; body diode conducts from source to drain with continuous source current up to 35 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 85 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 57 A TC=100℃, VGS @ 10V 1
Continuous Drain Current ID 27 A TA=25℃, VGS @ 10V, 10s 1
Continuous Drain Current ID 17 A TA=25℃, VGS @ 10V, Steady State 1
Continuous Drain Current ID 23 A TA=70℃, VGS @ 10V, 10s 1
Continuous Drain Current ID 14.5 A TA=70℃, VGS @ 10V, Steady State 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 252 mJ 1
Avalanche Current IAS 48 A 1
Total Power Dissipation PD 53 W TC=25℃ 1
Total Power Dissipation PD 6 W TA=25℃, 10s 1
Total Power Dissipation PD 2 W TA=25℃, Steady State 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.5 5.5 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 7.8 9 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.7 3.1 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 20 28 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 7.6 10.6 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Drain Charge Qgd 7.2 10.1 nC VDS=15V, VGS=4.5V, ID=15A 2
Turn-On Delay Time Td(on) 11 15.6 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Rise Time Tr 15 27 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Turn-Off Delay Time Td(off) 37.3 74.6 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Fall Time Tf 10.6 21.2 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Input Capacitance Ciss 2295 3213 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 570 374 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 210 294 pF VDS=15V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy EAS 63 mJ VDD=25V, L=0.1mH, IAS=24A 2
Continuous Source Current IS 35 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 160 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
Forward Transconductance gfs 43 S VDS=5V, ID=30A 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.028 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -6.16 mV/℃ 2
Reverse Recovery Time trr 30 nS IF=30A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 24 nC 2

CAD (KiCad official)

  • Symbol: WSF3085
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf3085-etched.step / wsf3085-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf3085.step / wsf3085.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 adde26a19bfa0c9c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF