component
WSF3085
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| wsf3085-etched.glb | 7d ago |
| wsf3085-etched.step | 7d ago |
| wsf3085-hero.glb | 7d ago |
| wsf3085-hero.overlay.json | 7d ago |
| wsf3085.glb | 7d ago |
| wsf3085.kicad_mod | 7d ago |
| wsf3085.kicad_sym | 7d ago |
| wsf3085.lbr | 7d ago |
| wsf3085.step | 7d ago |
WSF3085
Winsok Semicon · MOSFETs · TO-252
WSF3085 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.0 to 2.5 V. |
| 2 | D | passive | Drain, also connected to the tab; VDS max 30 V, continuous drain current 85 A at TC=25℃. |
| 3 | S | passive | Source; body diode conducts from source to drain with continuous source current up to 35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 85 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 57 | A | TC=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 27 | A | TA=25℃, VGS @ 10V, 10s | 1 | ||
| Continuous Drain Current | ID | 17 | A | TA=25℃, VGS @ 10V, Steady State | 1 | ||
| Continuous Drain Current | ID | 23 | A | TA=70℃, VGS @ 10V, 10s | 1 | ||
| Continuous Drain Current | ID | 14.5 | A | TA=70℃, VGS @ 10V, Steady State | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 252 | mJ | 1 | |||
| Avalanche Current | IAS | 48 | A | 1 | |||
| Total Power Dissipation | PD | 53 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 6 | W | TA=25℃, 10s | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25℃, Steady State | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | t≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | 5.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.8 | 9 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.7 | 3.1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 20 | 28 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Gate-Source Charge | Qgs | 7.6 | 10.6 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Gate-Drain Charge | Qgd | 7.2 | 10.1 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Turn-On Delay Time | Td(on) | 11 | 15.6 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | |
| Rise Time | Tr | 15 | 27 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | |
| Turn-Off Delay Time | Td(off) | 37.3 | 74.6 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | |
| Fall Time | Tf | 10.6 | 21.2 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | |
| Input Capacitance | Ciss | 2295 | 3213 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 570 | 374 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 210 | 294 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 63 | mJ | VDD=25V, L=0.1mH, IAS=24A | 2 | ||
| Continuous Source Current | IS | 35 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 160 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 43 | S | VDS=5V, ID=30A | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.028 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -6.16 | mV/℃ | 2 | |||
| Reverse Recovery Time | trr | 30 | nS | IF=30A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 24 | nC | 2 |
CAD (KiCad official)
- Symbol:
WSF3085 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf3085-etched.step/wsf3085-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf3085.step/wsf3085.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
adde26a19bfa0c9c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).