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WSF3040

Winsok Semicon · MOSFETs · TO-252-2(DPAK)

WSF3040 from Winsok Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS rated at ±20 V absolute maximum and a gate threshold voltage of 1.2 to 2.5 V.
2 D passive Drain of the N-channel MOSFET (also the exposed tab), with VDS rated at 30 V and continuous drain current of 43 A at TC=25℃.
3 S passive Source of the N-channel MOSFET, with continuous source current IS of 15 A and a body diode forward voltage VSD of 1 V max at IS=1A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current @TC=25℃ ID@TC=25℃ 43 A VGS @ 10V 1
Continuous Drain Current @TC=100℃ ID@TC=100℃ 30 A VGS @ 10V 1
Continuous Drain Current @TA=25℃ ID@TA=25℃ 11 A VGS @ 10V 1
Continuous Drain Current @TA=70℃ ID@TA=70℃ 9 A VGS @ 10V 1
Pulsed Drain Current IDM 112 A 1
Single Pulse Avalanche Energy EAS 53 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=15A (Note 3) 1
Avalanche Current IAS 22 A 1
Total Power Dissipation @TC=25℃ PD@TC=25℃ 37.5 W 1
Total Power Dissipation @TA=25℃ PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 4 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 10 12 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 15 18 mΩ VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 1.8 3.6 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 9.8 13.7 nC VDS=15V , VGS=4.5V , ID=15A 2
Gate-Source Charge Qgs 4.2 5.88 nC 2
Gate-Drain Charge Qgd 3.6 5 nC 2
Turn-On Delay Time Td(on) 5 8 ns VDD=15V , VGS=10V , RG=3.3Ω, ID=15A 2
Rise Time Tr 8 14 ns 2
Turn-Off Delay Time Td(off) 31 62 ns 2
Fall Time Tf 4 8 ns 2
Input Capacitance Ciss 940 1316 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 131 183 pF 2
Reverse Transfer Capacitance Crss 109 153 pF 2
Single Pulse Avalanche Energy (guaranteed) EAS 24.6 mJ VDD=25V , L=0.1mH , IAS=15A 2
Continuous Source Current IS 15 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 112 A 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF3040
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: wsf3040-etched.step / wsf3040-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf3040.step / wsf3040.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 fcdd4d45ad307c1b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF