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WSF3015

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Winsok Semicon MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswsf3015factory-2.0.0extractor-text

Verified WSF3015

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 5 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: WSF3015 · TO-252-4L · 5 pins
  • ✓copper: 5 copper pads, none touching another net
  • ✓datasheet: all 5 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-4
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-z6ki1wbv/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 5 pins = 5 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 5 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ wsf3015.kicad_sym✓ wsf3015.kicad_mod✓ wsf3015.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers wsf3015: viewers · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 5 pins · Ray 8d ago
wsf3015-etched.glb Publish 0.1.0 · Ray 8d ago
wsf3015-etched.step wsf3015: factory component page (tier=lcsc) · Ray 8d ago
wsf3015-hero.glb wsf3015: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
wsf3015-hero.overlay.json Publish 0.1.0 · Ray 8d ago
wsf3015.glb Publish 0.1.0 · Ray 8d ago
wsf3015.kicad_mod Publish 0.1.0 · Ray 8d ago
wsf3015.kicad_sym Publish 0.1.0 · Ray 8d ago
wsf3015.lbr Publish 0.1.0 · Ray 8d ago
wsf3015.step Publish 0.1.0 · Ray 8d ago

WSF3015

Winsok Semicon · MOSFETs · TO-252-4L

WSF3015 from Winsok Semicon, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30V, 22A continuous at Tc=25°C, RDS(ON) 15mΩ typ at VGS=10V).
2 G1 input Gate of the N-channel MOSFET, rated ±20V VGS maximum with threshold 1.0V to 2.5V.
3 D1/D2 passive Drain connection shown as pin (3) for both D1 (N-channel, 30V) and D2 (P-channel, -30V), i.e. a shared drain.
4 S2 passive Source of the P-channel MOSFET (-30V, -19A continuous at Tc=25°C, RDS(ON) 25mΩ typ at VGS=-10V).
5 G2 input Gate of the P-channel MOSFET, rated ±20V VGS maximum with threshold -1.0V to -2.8V.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252-4L
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
N-Ch Static Drain-Source On-Resistance RDS(ON) 15 22 mΩ VGS=10V, ID=10A 2
N-Ch Static Drain-Source On-Resistance RDS(ON) 20 30 mΩ VGS=4.5V, ID=5A 2
N-Ch Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS, ID=250uA 2
N-Ch Drain-Source Leakage Current IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
N-Ch Drain-Source Leakage Current IDSS 30 uA VDS=20V, VGS=0V, TJ=85℃ 2
N-Ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-Ch Gate Resistance Rg 2.5 5 Ω VDS=0V, VGS=0V, f=1MHz 2
N-Ch Continuous Source Current IS 10 A VG=VD=0V, Force Current 2
N-Ch Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
P-Ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 3
P-Ch Static Drain-Source On-Resistance RDS(ON) 25 33 mΩ VGS=-10V, ID=-7A 3
P-Ch Static Drain-Source On-Resistance RDS(ON) 37 54 mΩ VGS=-4.5V, ID=-5A 3
P-Ch Gate Threshold Voltage VGS(th) -1 -2.8 V VGS=VDS, ID=-250uA 3
P-Ch Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS=0V, TJ=25℃ 3
P-Ch Drain-Source Leakage Current IDSS -30 uA VDS=-20V, VGS=0V, TJ=85℃ 3
P-Ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-Ch Continuous Source Current IS -8 A VG=VD=0V, Force Current 3
P-Ch Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3
N-Ch Drain-Source Voltage VDS 30 V 1
P-Ch Drain-Source Voltage VDS -30 V 1
N-Ch Gate-Source Voltage VGS -20 20 V 1
P-Ch Gate-Source Voltage VGS -20 20 V 1
N-Ch Continuous Drain Current ID 22 A VGS(NP)=10V, Tc=25℃ 1
P-Ch Continuous Drain Current ID -19 A VGS(NP)=10V, Tc=25℃ 1
N-Ch Continuous Drain Current ID 10 A VGS(NP)=10V, Tc=100℃ 1
P-Ch Continuous Drain Current ID -8 A VGS(NP)=10V, Tc=100℃ 1
N-Ch Pulse Drain Current Tested IDP 52 A VGS(NP)=10V 1
P-Ch Pulse Drain Current Tested IDP -45 A VGS(NP)=10V 1
N-Ch Avalanche Energy, Single pulse EAS 22 mJ L=0.5mH 1
P-Ch Avalanche Energy, Single pulse EAS 45 mJ L=0.5mH 1
N-Ch Avalanche Current, Single pulse IAS 21 A L=0.5mH 1
P-Ch Avalanche Current, Single pulse IAS -30 A L=0.5mH 1
N-Ch Total Power Dissipation PD 18 W Tc=25℃ 1
P-Ch Total Power Dissipation PD 18 W Tc=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature TJ 150 ℃ 1
Thermal Resistance Junction to Ambient RqJA 62 ℃/W Steady State, 1in2 FR-4 2oz Cu, t=999s 1
Thermal Resistance Junction to Case RqJC 5 ℃/W Steady State 1
N-Ch Total Gate Charge Qg 7.2 nC VDS=20V, VGS=4.5V, IDS=10A 2
N-Ch Gate-Source Charge Qgs 1.4 nC VDS=20V, VGS=4.5V, IDS=10A 2
N-Ch Gate-Drain Charge Qgd 2.2 nC VDS=20V, VGS=4.5V, IDS=10A 2
N-Ch Turn-On Delay Time Td(on) 4.1 ns VDD=15V, IDS=5A, VGS=10V, RG=3.3R 2
N-Ch Rise Time Tr 9.8 ns VDD=15V, IDS=5A, VGS=10V, RG=3.3R 2
N-Ch Turn-Off Delay Time Td(off) 15.5 ns VDD=15V, IDS=5A, VGS=10V, RG=3.3R 2
N-Ch Fall Time Tf 6 ns VDD=15V, IDS=5A, VGS=10V, RG=3.3R 2
N-Ch Input Capacitance Ciss 572 pF VDS=15V, VGS=0V, f=1MHz 2
N-Ch Output Capacitance Coss 81 pF VDS=15V, VGS=0V, f=1MHz 2
N-Ch Reverse Transfer Capacitance Crss 65 pF VDS=15V, VGS=0V, f=1MHz 2
P-Ch Total Gate Charge Qg 9.8 nC VDS=-15V, VGS=-4.5V, ID=-12A 3
P-Ch Gate-Source Charge Qgs 2.2 nC VDS=-15V, VGS=-4.5V, ID=-12A 3
P-Ch Gate-Drain Charge Qgd 3.4 nC VDS=-15V, VGS=-4.5V, ID=-12A 3
P-Ch Turn-On Delay Time Td(on) 16.4 ns VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω 3
P-Ch Rise Time Tr 20.2 ns VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω 3
P-Ch Turn-Off Delay Time Td(off) 55 ns VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω 3
P-Ch Fall Time Tf 10 ns VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω 3
P-Ch Input Capacitance Ciss 930 pF VDS=-15V, VGS=0V, f=1MHz 3
P-Ch Output Capacitance Coss 148 pF VDS=-15V, VGS=0V, f=1MHz 3
P-Ch Reverse Transfer Capacitance Crss 115 pF VDS=-15V, VGS=0V, f=1MHz 3

CAD (KiCad official)

  • Symbol: WSF3015
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4L (KiCad packages3D, STEP)
  • 3D model files: wsf3015-etched.step / wsf3015-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf3015.step / wsf3015.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (9 pp, sha256 37c6add5a469de1d, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF