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WSF28N06

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSF28N06

Winsok Semicon · MOSFETs · TO-252-2(DPAK)

WSF28N06 from Winsok Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the package drawing marks it as the left lead in the top view, and VGSS is limited to ±20 V.
2 D passive Drain; the package drawing marks it as the centre lead, and it is also the exposed tab marked D. VDSS is 60 V and continuous ID is 28 A at TC=25°C.
3 S passive Source; the package drawing marks it as the right lead in the top view. Diode continuous forward current IS is 12 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Maximum Junction Temperature TJ 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Diode Continuous Forward Current IS 12 A TC=25°C 1
Pulse Drain Current IDP 96 A TC=25°C 1
Pulse Drain Current IDP 68 A TC=100°C 1
Continuous Drain Current ID 28 A TC=25°C 1
Continuous Drain Current ID 17 A TC=100°C 1
Maximum Power Dissipation PD 60 W TC=25°C 1
Maximum Power Dissipation PD 30 W TC=100°C 1
Thermal Resistance Junction to Case RθJC 2.5 °C/W 1
Thermal Resistance Junction to Ambient RθJA 50 °C/W Mounted on 1in2 pad 3
Drain-Source Avalanche Energy EAS 22 mJ L=0.5mH 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, IDS=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=48V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS, IDS=250μA 2
Gate Leakage Current IGSS -10 10 μA VGS=±16V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 28 40 mΩ VGS=10V, IDS=12A 2
Drain-Source On-state Resistance RDS(ON) 38 50 mΩ VGS=5V, IDS=11A 2
Diode Forward Voltage VSD 0.8 1.3 V ISD=12A, VGS=0V 2
Turn-on Delay Time td(ON) 8 15 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-on Rise Time Tr 8 15 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Delay Time td(OFF) 28 51 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Fall Time Tf 22 41 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Total Gate Charge Qg 12 17 nC VDS=30V, VGS=10V, IDS=12A 2

CAD (KiCad official)

  • Symbol: WSF28N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: wsf28n06-etched.step / wsf28n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf28n06.step / wsf28n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 c30bb0bbeafee77c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF