component
WSF25N20
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Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSF25N20
Winsok Semicon · MOSFETs · TO-252
WSF25N20 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.0 to 2.5 V at 250 uA. |
| 2 | D | passive | Drain (center lead, also connected to the tab); VDS max 200 V, continuous ID 25 A at TC=25℃. |
| 3 | S | passive | Source; continuous body-diode source current 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 60 | 75 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 150 | mΩ | VGS=6.0V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=160V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=160V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2 | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 10 | mJ | VDD=25V, L=0.5mH, IAS=6.5A | 2 | ||
| Continuous Source Current | IS | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 36 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=12A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current at TC=25℃ | ID@TC=25℃ | 25 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current at TC=100℃ | ID@TC=100℃ | 16 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current at TA=25℃ | ID@TA=25℃ | 3.7 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current at TA=70℃ | ID@TA=70℃ | 3 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 35 | mJ | 1 | |||
| Avalanche Current | IAS | 6.5 | A | 1 | |||
| Total Power Dissipation at TC=25℃ | PD@TC=25℃ | 113 | W | 1 | |||
| Total Power Dissipation at TC=100℃ | PD@TC=100℃ | 45 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<=10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.1 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<=10sec | 1 |
CAD (KiCad official)
- Symbol:
WSF25N20 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf25n20-etched.step/wsf25n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf25n20.step/wsf25n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (7 pp, sha256
b6d84e025767f66d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF25N20
**Winsok Semicon** · MOSFETs · TO-252
WSF25N20 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.0 to 2.5 V at 250 uA. |
| 2 | D | passive | Drain (center lead, also connected to the tab); VDS max 200 V, continuous ID 25 A at TC=25℃. |
| 3 | S | passive | Source; continuous body-diode source current 12 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 60 | 75 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 85 | 150 | mΩ | VGS=6.0V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=160V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=160V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Gate Resistance | Rg | | 2 | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Single Pulse Avalanche Energy | EAS | 10 | | | mJ | VDD=25V, L=0.5mH, IAS=6.5A | 2 |
| Continuous Source Current | IS | | | 12 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 36 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, IS=12A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current at TC=25℃ | ID@TC=25℃ | | | 25 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TC=100℃ | ID@TC=100℃ | | | 16 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TA=25℃ | ID@TA=25℃ | | | 3.7 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TA=70℃ | ID@TA=70℃ | | | 3 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 75 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 35 | mJ | | 1 |
| Avalanche Current | IAS | | | 6.5 | A | | 1 |
| Total Power Dissipation at TC=25℃ | PD@TC=25℃ | | | 113 | W | | 1 |
| Total Power Dissipation at TC=100℃ | PD@TC=100℃ | | | 45 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<=10sec | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.1 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<=10sec | 1 |
## CAD (KiCad official)
- Symbol: `WSF25N20`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wsf25n20-etched.step` / `wsf25n20-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf25n20.step` / `wsf25n20.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586178586206617600) (7 pp, sha256 `b6d84e025767f66d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf25n20-datasheet.pdf)