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Contents

README

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WSF20P03

Winsok Semicon · MOSFETs · TO-252

WSF20P03 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage rated ±25 V maximum, threshold -1.0 to -2.5 V.
2 D passive Drain (also the exposed tab); rated VDS -30 V and continuous drain current -27 A at TC=25℃.
3 S passive Source of the P-channel MOSFET; continuous body-diode source current up to -5.8 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID -27 A TC=25℃, VGS @ -10V 1
Continuous Drain Current ID -20 A TC=100℃, VGS @ -10V 1
Continuous Drain Current ID -9 A TA=25℃, t≤10s, VGS @ -10V 1
Continuous Drain Current ID -8.5 A TA=25℃, steady state, VGS @ -10V 1
Continuous Drain Current ID -8 A TA=70℃, t≤10s, VGS @ -10V 1
Continuous Drain Current ID -7.4 A TA=70℃, steady state, VGS @ -10V 1
Pulsed Drain Current IDM -60 A 1
Single Pulse Avalanche Energy EAS 93 mJ 1
Avalanche Current IAS -25 A 1
Total Power Dissipation PD 25 W TC=25℃ 1
Total Power Dissipation PD 3.5 W TA=25℃, t≤10s 1
Total Power Dissipation PD 2 W TA=25℃, steady state 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 26 32 mΩ VGS=-10V, ID=-5A 2
Static Drain-Source On-Resistance RDS(ON) 36 45 mΩ VGS=-4.5V, ID=-4A 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 13 26 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 12.6 17.6 nC VDS=-15V, VGS=-4.5V, ID=-5A 2
Gate-Source Charge Qgs 4.8 6.7 nC VDS=-15V, VGS=-4.5V, ID=-5A 2
Gate-Drain Charge Qgd 4.5 5.7 nC VDS=-15V, VGS=-4.5V, ID=-5A 2
Turn-On Delay Time Td(on) 4.6 9.2 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-5A 2
Rise Time Tr 14.8 26.6 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-5A 2
Turn-Off Delay Time Td(off) 41 82 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-5A 2
Fall Time Tf 19.6 39.2 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-5A 2
Continuous Source Current IS -5.8 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -24 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF20P03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf20p03-etched.step / wsf20p03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf20p03.step / wsf20p03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 eb5430ac6bcad0fa, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF