component
WSF15N10
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSF15N10
Winsok Semicon · MOSFETs · TO-252
WSF15N10 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated ±20 V, with a threshold VGS(th) of 1.5 to 2.5 V at ID=250uA. |
| 2 | D | passive | Drain, connected to the exposed tab; the drain-source voltage is rated 100 V, with 15 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source; the body diode continuous source current is 5 A and the pulsed source current is 64 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 15 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 11 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 64 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | 1 | |||
| Avalanche Current | IAS | 6 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 60 | W | 1 | |||
| Total Power Dissipation | PD@TC=100℃ | 30 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 170 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 170 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.5 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=10V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 115 | 130 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2 | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 12 | 21 | 30 | nC | VDS=50V, VGS=10V, ID=5A | 2 |
| Gate-Source Charge | Qgs | 3.4 | 4.9 | 6.4 | nC | 2 | |
| Gate-Drain Charge | Qgd | 2.9 | 5.8 | 8.7 | nC | 2 | |
| Turn-On Delay Time | Td(on) | 13 | 24 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 | |
| Rise Time | Tr | 10 | 19 | ns | 2 | ||
| Turn-Off Delay Time | Td(off) | 32 | 60 | ns | 2 | ||
| Fall Time | Tf | 16 | 30 | ns | 2 | ||
| Input Capacitance | Ciss | 730 | 940 | 1250 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | 45 | 80 | 115 | pF | 2 | |
| Reverse Transfer Capacitance | Crss | 25 | 50 | 75 | pF | 2 | |
| Single Pulse Avalanche Energy | EAS | 25 | mJ | VDD=25V, L=0.5mH, IAS=6A | 2 | ||
| Continuous Source Current | IS | 5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 64 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.1 | V | VGS=0V, IS=5A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 33 | 47 | 61 | nS | IF=5A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | 61 | 87 | 113 | nC | 2 |
CAD (KiCad official)
- Symbol:
WSF15N10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf15n10-etched.step/wsf15n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf15n10.step/wsf15n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
af15c96e7966a4be, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSF15N10
**Winsok Semicon** · MOSFETs · TO-252
WSF15N10 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated ±20 V, with a threshold VGS(th) of 1.5 to 2.5 V at ID=250uA. |
| 2 | D | passive | Drain, connected to the exposed tab; the drain-source voltage is rated 100 V, with 15 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source; the body diode continuous source current is 5 A and the pulsed source current is 64 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 15 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 11 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 64 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 30 | mJ | | 1 |
| Avalanche Current | IAS | | | 6 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 60 | W | | 1 |
| Total Power Dissipation | PD@TC=100℃ | | | 30 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 170 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 170 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.5 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 80 | 100 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 115 | 130 | mΩ | VGS=4.5V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 2 | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 12 | 21 | 30 | nC | VDS=50V, VGS=10V, ID=5A | 2 |
| Gate-Source Charge | Qgs | 3.4 | 4.9 | 6.4 | nC | | 2 |
| Gate-Drain Charge | Qgd | 2.9 | 5.8 | 8.7 | nC | | 2 |
| Turn-On Delay Time | Td(on) | | 13 | 24 | ns | VDD=30V, VGS=10V, RG=6Ω, ID=1A, RL=30Ω | 2 |
| Rise Time | Tr | | 10 | 19 | ns | | 2 |
| Turn-Off Delay Time | Td(off) | | 32 | 60 | ns | | 2 |
| Fall Time | Tf | | 16 | 30 | ns | | 2 |
| Input Capacitance | Ciss | 730 | 940 | 1250 | pF | VDS=30V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | 45 | 80 | 115 | pF | | 2 |
| Reverse Transfer Capacitance | Crss | 25 | 50 | 75 | pF | | 2 |
| Single Pulse Avalanche Energy | EAS | 25 | | | mJ | VDD=25V, L=0.5mH, IAS=6A | 2 |
| Continuous Source Current | IS | | | 5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 64 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.1 | V | VGS=0V, IS=5A, TJ=25℃ | 2 |
| Reverse Recovery Time | trr | 33 | 47 | 61 | nS | IF=5A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | 61 | 87 | 113 | nC | | 2 |
## CAD (KiCad official)
- Symbol: `WSF15N10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wsf15n10-etched.step` / `wsf15n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf15n10.step` / `wsf15n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586177303202713600) (5 pp, sha256 `af15c96e7966a4be`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsf15n10-datasheet.pdf)