component
WSE9968A
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSE9968A
Winsok Semicon · MOSFETs · SOT-89
WSE9968A from Winsok Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated at ±20 V maximum, with a threshold of 1.0 V min to 3.0 V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the top tab shown labeled D; drain-source voltage rated at 100 V and continuous drain current 4.4 A at TA=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is 3.0 A max and pulsed source current is 16 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 75 | mΩ | VGS=10V , ID=4A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Resistance | Rg | 2.5 | 4 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 16 | 22 | nC | VDS=80V , VGS=10V , ID=4A | 2 | |
| Gate-Source Charge | Qgs | 2.5 | 4.2 | nC | VDS=80V , VGS=10V , ID=4A | 2 | |
| Gate-Drain Charge | Qgd | 3 | 4.5 | nC | VDS=80V , VGS=10V , ID=4A | 2 | |
| Turn-On Delay Time | Td(on) | 11 | 20 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 | |
| Rise Time | Tr | 6 | 11 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 27 | 49 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 | |
| Fall Time | Tf | 5 | 10 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 | |
| Input Capacitance | Ciss | 760 | 980 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 12 | mJ | VDD=25V , L=0.5mH , IAS=4A | 2 | ||
| Continuous Source Current | IS | 3 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 16 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 4.4 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 3.5 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 12 | mJ | 1 | |||
| Avalanche Current | IAS | 7 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 35 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.098 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -4.57 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 20 | S | VDS=5V , ID=2A | 2 | ||
| Output Capacitance | Coss | 46 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 26 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 27 | nS | IF=3A,dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 36 | nC | IF=3A,dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSE9968A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
wse9968a-etched.step/wse9968a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wse9968a.step/wse9968a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
d627dbe3a180092b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSE9968A
**Winsok Semicon** · MOSFETs · SOT-89
WSE9968A from Winsok Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated at ±20 V maximum, with a threshold of 1.0 V min to 3.0 V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the top tab shown labeled D; drain-source voltage rated at 100 V and continuous drain current 4.4 A at TA=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is 3.0 A max and pulsed source current is 16 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 75 | mΩ | VGS=10V , ID=4A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=80V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Resistance | Rg | | 2.5 | 4 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | | 16 | 22 | nC | VDS=80V , VGS=10V , ID=4A | 2 |
| Gate-Source Charge | Qgs | | 2.5 | 4.2 | nC | VDS=80V , VGS=10V , ID=4A | 2 |
| Gate-Drain Charge | Qgd | | 3 | 4.5 | nC | VDS=80V , VGS=10V , ID=4A | 2 |
| Turn-On Delay Time | Td(on) | | 11 | 20 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 |
| Rise Time | Tr | | 6 | 11 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 27 | 49 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 |
| Fall Time | Tf | | 5 | 10 | ns | VDD=50V , VGS=10V , RG=6Ω, ID=1A ,RL=30Ω | 2 |
| Input Capacitance | Ciss | | 760 | 980 | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Single Pulse Avalanche Energy | EAS | 12 | | | mJ | VDD=25V , L=0.5mH , IAS=4A | 2 |
| Continuous Source Current | IS | | | 3 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | 16 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | 4.4 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | 3.5 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 12 | mJ | | 1 |
| Avalanche Current | IAS | | | 7 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 3.5 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 85 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 35 | ℃/W | | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.098 | | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -4.57 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 20 | | S | VDS=5V , ID=2A | 2 |
| Output Capacitance | Coss | | 46 | | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 26 | | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Reverse Recovery Time | trr | | 27 | | nS | IF=3A,dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 36 | | nC | IF=3A,dI/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSE9968A`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `wse9968a-etched.step` / `wse9968a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wse9968a.step` / `wse9968a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wse9968a-datasheet.pdf) (5 pp, sha256 `d627dbe3a180092b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wse9968a-datasheet.pdf)