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Ray Publish 0.1.0 a68ef89 17d ago

WSE3088

Winsok Semicon · MOSFETs · SOT-89

WSE3088 from Winsok Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V max, with threshold VGS(th) of 0.5 V min to 1.5 V max at ID=250uA.
2 D passive Drain of the N-channel MOSFET, also connected to the drain tab shown on the package; rated 30 V VDS and 7.0 A continuous at Tc=25℃ (28 A pulsed).
3 S passive Source of the N-channel MOSFET; the body diode runs source to drain, with continuous source current IS of 2 A max.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V Printed as ±20 V 1
Continuous Drain Current ID@Tc=25℃ 7 A VGS @ 10V, Tc=25℃ 1
Continuous Drain Current ID@Tc=70℃ 5.5 A VGS @ 10V, Tc=70℃ 1
Pulsed Drain Current IDM 28 A 1
Single Pulse Avalanche Energy EAS 9 mJ 1
Avalanche Current IAS 6 A 1
Total Power Dissipation PD@TA=25℃ 1.8 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 70 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec 1
Thermal Resistance Junction-Case RθJC 30 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≦10sec 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 23 28 mΩ VGS=4.5V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 31 38 mΩ VGS=2.5V, ID=6A 2
Gate Threshold Voltage VGS(th) 0.5 1 1.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.5 5 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 8 10.5 nC VDS=10V, VGS=4.5V, ID=7A 2
Turn-On Delay Time Td(on) 4 7.5 ns VDD=10V, VGS=10V, RG=6Ω, ID=1A, RL=10Ω 2
Rise Time Tr 12.5 23 ns VDD=10V, VGS=10V, RG=6Ω, ID=1A, RL=10Ω 2
Turn-Off Delay Time Td(off) 13.5 25 ns VDD=10V, VGS=10V, RG=6Ω, ID=1A, RL=10Ω 2
Fall Time Tf 2 3.5 ns VDD=10V, VGS=10V, RG=6Ω, ID=1A, RL=10Ω 2
Input Capacitance Ciss 360 730 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 80 112 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 55 65 pF VDS=10V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy EAS 7 mJ VDD=25V, L=0.5mH, IAS=6A 2
Continuous Source Current IS 2 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 28 A 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=3A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSE3088
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: wse3088-etched.step / wse3088-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wse3088.step / wse3088.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 37904dcc49713691, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF