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Ray wsd90p06dn56: specified limits as data (metadata.characteristics, 18 rows from the datasheet) d711293 17d ago

WSD90P06DN56

Winsok Semicon · MOSFETs · DFN-8(5x6)

WSD90P06DN56 from Winsok Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, with drain-source voltage rated -60 V and continuous drain current of -90 A at TC=25℃.
2 S passive Source of the P-channel MOSFET, with drain-source voltage rated -60 V and continuous drain current of -90 A at TC=25℃.
3 S passive Source of the P-channel MOSFET, with drain-source voltage rated -60 V and continuous drain current of -90 A at TC=25℃.
4 G input Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V and threshold voltage of -1.1 V min to -2.5 V max.
5 D passive Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and pulsed drain current of -190 A.
6 D passive Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and pulsed drain current of -190 A.
7 D passive Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and pulsed drain current of -190 A.
8 D passive Drain of the P-channel MOSFET, with drain-source voltage rated -60 V and pulsed drain current of -190 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 10 14 mΩ VGS=-10V, ID=-18A 2
Static Drain-Source On-Resistance RDS(ON) 13 18 mΩ VGS=-4.5V, ID=-12A 2
Gate Threshold Voltage VGS(th) -1.1 -1.8 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -40 A TC=25℃ 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -90 A -VGS @ -10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ -40 A -VGS @ -10V, TC=100℃ 1
Pulsed Drain Current IDM -190 A 1
Total Power Dissipation PD@TC=25℃ 96 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Device mounted on 1in2 FR-4 board, 2oz copper, still air, TA=25°C (note A) 1
Thermal Resistance Junction-Case RθJC 1.3 ℃/W 1

CAD (KiCad official)

  • Symbol: WSD90P06DN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: wsd90p06dn56-etched.step / wsd90p06dn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd90p06dn56.step / wsd90p06dn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 476f1ef9c6e28c00, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF