component
WSD4078DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 18d ago |
| viewers | 18d ago |
| package.json | 18d ago |
| page.json | 18d ago |
| README.md | 18d ago |
| wsd4078dn56-etched.glb | 18d ago |
| wsd4078dn56-etched.step | 18d ago |
| wsd4078dn56-hero.glb | 18d ago |
| wsd4078dn56-hero.overlay.json | 18d ago |
| wsd4078dn56.glb | 18d ago |
| wsd4078dn56.kicad_mod | 18d ago |
| wsd4078dn56.kicad_sym | 18d ago |
| wsd4078dn56.lbr | 18d ago |
| wsd4078dn56.step | 18d ago |
WSD4078DN56
Winsok Semicon · MOSFETs · DFN-8(5x6)
WSD4078DN56 from Winsok Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 40 V, ID 40 A). |
| 2 | G1 | input | Gate of MOSFET 1 (VGS ±20 V max, threshold 1.2 to 2.5 V). |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 40 V, ID 40 A). |
| 4 | G2 | input | Gate of MOSFET 2 (VGS ±20 V max, threshold 1.2 to 2.5 V). |
| 5 | D2 | passive | Drain of MOSFET 2 (VDS 40 V, RDS(ON) 7.0 mΩ typ at VGS=10 V). |
| 6 | D2 | passive | Drain of MOSFET 2, tied to the other D2 pin (VDS 40 V). |
| 7 | D1 | passive | Drain of MOSFET 1 (VDS 40 V, RDS(ON) 7.0 mΩ typ at VGS=10 V). |
| 8 | D1 | passive | Drain of MOSFET 1, tied to the other D1 pin (VDS 40 V). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 40 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 28 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 180 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 10 | mJ | 1 | |||
| Avalanche Current | IAS | 14 | A | 1 | |||
| Total Power Dissipation | PD@Tc=25℃ | 31 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4.1 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 9.5 | mΩ | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=4.5V , ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 2 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 25 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.043 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -6.94 | mV/℃ | VGS=VDS , ID =250uA | 2 | ||
| Forward Transconductance | gfs | 13 | S | VDS=5V , ID=15A | 2 | ||
| Gate Resistance | Rg | 0.8 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 9.4 | nC | VDS=20V , VGS=10V , ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | VDS=20V , VGS=10V , ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDS=20V , VGS=10V , ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 12 | ns | VDD=20V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω | 2 | ||
| Rise Time | Tr | 10 | ns | VDD=20V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 25 | ns | VDD=20V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω | 2 | ||
| Fall Time | Tf | 11 | ns | VDD=20V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω | 2 | ||
| Input Capacitance | Ciss | 700 | pF | VDS=20V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 132 | pF | VDS=20V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 108 | pF | VDS=20V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
WSD4078DN56 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
wsd4078dn56-etched.step/wsd4078dn56-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsd4078dn56.step/wsd4078dn56.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (7 pp, sha256
6504a56faf506e8e, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).