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WSD3042DN56

Public Made by Adom

by adom

Winsok Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSD3042DN56

Winsok Semicon · MOSFETs · DFN5x6-8

WSD3042DN56 from Winsok Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, connected to the body diode anode; the datasheet lists pins 1, 2 and 3 as Source.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3; the device is rated 30V VDSS and 40A continuous drain current at TC=25°C.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2, with RDS(ON) max 10.8mΩ at VGS=10V.
4 G input Gate of the N-channel MOSFET, with VGSS rated ±12V and threshold VGS(th) of 0.5V min to 1.3V max.
5 D passive Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDSS is 30V and pulsed drain current IDM is 90A at TC=25°C.
6 D passive Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; continuous drain current is 40A at TC=25°C.
7 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; drain-source breakdown voltage is 30V min.
8 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; the datasheet lists pins 5 to 8 as Drain.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -12 12 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Diode Continuous Forward Current IS 10 A TC=25°C 1
Continuous Drain Current ID 40 A TC=25°C 1
Continuous Drain Current ID 26 A TC=100°C 1
Pulsed Drain Current IDM 90 A TC=25°C 1
Maximum Power Dissipation PD 32 W TC=25°C 1
Maximum Power Dissipation PD 12.8 W TC=100°C 1
Thermal Resistance-Junction to Case, Steady State RθJC 3.9 °C/W Steady State 1
Continuous Drain Current (ambient) ID 9 A TA=25°C 1
Continuous Drain Current (ambient) ID 7 A TA=70°C 1
Pulsed Drain Current (ambient) IDM 36 A TA=25°C 1
Maximum Power Dissipation (ambient) PD 1.5 W TA=25°C 1
Maximum Power Dissipation (ambient) PD 1 W TA=70°C 1
Thermal Resistance-Junction to Ambient RθJA 34 °C/W t ≤ 10s 1
Thermal Resistance-Junction to Ambient RθJA 84 °C/W Steady State 1
Avalanche Current, Single Pulse IAS 20 A L=0.1mH 1
Avalanche Energy, Single Pulse EAS 20 mJ L=0.1mH 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250μA 2
Drain-Source Breakdown Voltage (transient) BVDSSt 34 V VGS=0V, ID(aval)=20A, Tcase=25°C, ttransient=100ns 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 μA TJ=85°C 2
Gate Threshold Voltage VGS(th) 0.5 0.85 1.3 V VDS=VGS, IDS=250μA 2
Gate Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 9 10.8 mΩ VGS=10V, IDS=10A 2
Drain-Source On-state Resistance RDS(ON) 9.6 12 mΩ VGS=4.5V, IDS=7A 2
Drain-Source On-state Resistance RDS(ON) 12 16 mΩ VGS=2.5V, IDS=5A 2
Forward Transconductance Gfs 45 S VDS=25V, IDS=20A 2
Diode Forward Voltage VSD 0.75 1.3 V ISD=3A, VGS=0V 2
Reverse Recovery Time trr 12.2 ns ISD=10A, dlSD/dt=100A/μs 2
Charge Time ta 7.5 ns ISD=10A, dlSD/dt=100A/μs 2
Discharge Time tb 4.6 ns ISD=10A, dlSD/dt=100A/μs 2
Reverse Recovery Charge Qrr 5.6 nC ISD=10A, dlSD/dt=100A/μs 2
Gate Resistance RG 2.4 4.3 Ω VGS=0V, VDS=0V, F=1MHz 2
Input Capacitance Ciss 1150 1500 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Output Capacitance Coss 120 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Reverse Transfer Capacitance Crss 85 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 9.6 18 ns VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-on Rise Time tr 10 18 ns VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Delay Time td(OFF) 29 53 ns VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Fall Time tf 4.5 8 ns VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Total Gate Charge Qg 25.5 36 nC VDS=15V, VGS=10V, IDS=10A 2
Total Gate Charge Qg 11 12 nC VDS=15V, VGS=4.5V, IDS=10A 2
Threshold Gate Charge Qgth 0.85 nC 2
Gate-Source Charge Qgs 2.4 nC 2
Gate-Drain Charge Qgd 3.4 nC 2

CAD (KiCad official)

  • Symbol: WSD3042DN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: wsd3042dn56-etched.step / wsd3042dn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd3042dn56.step / wsd3042dn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 ecd35decec942772, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF