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WSD30160DN56

Winsok Semicon · MOSFETs · DFN5X6-8

WSD30160DN56 from Winsok Semicon, in a DFN5X6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin of the N-channel MOSFET, labeled S on the DFN5X6-8 pin configuration drawing.
2 S passive Source pin of the N-channel MOSFET, labeled S on the DFN5X6-8 pin configuration drawing.
3 S passive Source pin of the N-channel MOSFET, labeled S on the DFN5X6-8 pin configuration drawing.
4 G input Gate pin of the N-channel MOSFET with VGS rated at ±20 V maximum.
5 D passive Drain pin of the N-channel MOSFET (VDS 30 V max), tied to the drain pad on the top side of the package drawing.
6 D passive Drain pin of the N-channel MOSFET (VDS 30 V max), tied to the drain pad on the top side of the package drawing.
7 D passive Drain pin of the N-channel MOSFET (VDS 30 V max), tied to the drain pad on the top side of the package drawing.
8 D passive Drain pin of the N-channel MOSFET (VDS 30 V max), tied to the drain pad on the top side of the package drawing.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN5X6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 120 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 68 A VGS @ 10V 1
Pulsed Drain Current IDM 300 A 1
Single Pulse Avalanche Energy EAS 128 mJ 1
Avalanche Current IAS 50 A 1
Total Power Dissipation PD@TC=25℃ 62.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 30 ℃/W 1
Thermal Resistance Junction-Case RθJC 2 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 1.9 2.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 2.9 3.5 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 0.8 1.5 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 20 A 2
Pulsed Source Current ISM 200 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V 2

CAD (KiCad official)

  • Symbol: WSD30160DN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8 (KiCad packages3D, STEP)
  • 3D model files: wsd30160dn56-etched.step / wsd30160dn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd30160dn56.step / wsd30160dn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 8534f528ed3efc25, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF