component
WSB5546N-2
Public Made by Adomby adom
WILLSEMI(Will Semicon) Schottky Barrier Diodes (SBD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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WSB5546N-2
WILLSEMI(Will Semicon) · Schottky Barrier Diodes (SBD) · DFN1006-2L
WSB5546N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN1006-2L |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 0.51 | 0.6 | V | IF=0.2A | 1 | |
| Reverse current | IR | 0.5 | uA | VR=10V | 1 | ||
| Reverse current | IR | 1 | uA | VR=40V | 1 | ||
| Thermal resistance junction to ambient | Rθ(j-a) | 500 | K/W | Junction to ambient | 1 | ||
| Reverse voltage (repetitive peak) | VRM | 40 | V | 1 | |||
| Reverse voltage (DC) | VR | 40 | V | 1 | |||
| Average rectified forward current | IO | 0.2 | A | 1 | |||
| Peak forward current | IFSM | 3 | A | Pulse Width=8.3ms, Single half-sine Pulse | 1 | ||
| Junction temperature | TJ | 150 | OC | 1 | |||
| Operating temperature | Topr | -40 | 150 | OC | 1 | ||
| Storage temperature | Tstg | -55 | 150 | OC | 1 | ||
| Junction capacitance | CJ | 17 | pF | VR=4V, F=1MHz | 1 |
CAD (KiCad official)
- Symbol:
WSB5546N-2 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
wsb5546n-2-etched.step/wsb5546n-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsb5546n-2.step/wsb5546n-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI(Will Semicon) datasheet (4 pp, sha256
77128f9bb21ae70e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSB5546N-2
**WILLSEMI(Will Semicon)** · Schottky Barrier Diodes (SBD) · DFN1006-2L
WSB5546N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN1006-2L |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | 0.51 | 0.6 | V | IF=0.2A | 1 |
| Reverse current | IR | | | 0.5 | uA | VR=10V | 1 |
| Reverse current | IR | | | 1 | uA | VR=40V | 1 |
| Thermal resistance junction to ambient | Rθ(j-a) | | | 500 | K/W | Junction to ambient | 1 |
| Reverse voltage (repetitive peak) | VRM | | | 40 | V | | 1 |
| Reverse voltage (DC) | VR | | | 40 | V | | 1 |
| Average rectified forward current | IO | | | 0.2 | A | | 1 |
| Peak forward current | IFSM | | | 3 | A | Pulse Width=8.3ms, Single half-sine Pulse | 1 |
| Junction temperature | TJ | | | 150 | OC | | 1 |
| Operating temperature | Topr | -40 | | 150 | OC | | 1 |
| Storage temperature | Tstg | -55 | | 150 | OC | | 1 |
| Junction capacitance | CJ | | 17 | | pF | VR=4V, F=1MHz | 1 |
## CAD (KiCad official)
- Symbol: `WSB5546N-2`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `wsb5546n-2-etched.step` / `wsb5546n-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsb5546n-2.step` / `wsb5546n-2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WILLSEMI(Will Semicon) datasheet](docs/wsb5546n-2-datasheet.pdf) (4 pp, sha256 `77128f9bb21ae70e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsb5546n-2-datasheet.pdf)