# WS3235D-8

**WILLSEMI(Will Semicon)** · Voltage References · DFN-8-EP(2x2)

WS3235D-8 from WILLSEMI(Will Semicon), in a DFN-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | The input power source; VIN can withstand up to 30V input. |
| 2 | GND | power_in | Analog ground. |
| 3 | NC | unconnected | No internal connection. |
| 4 | WRN | output | Open-drain logic output that turns LOW when any protection event occurs. |
| 5 | EN | input | Active-low chip enable; pull low or leave floating to enable the IC and force high to disable it. |
| 6 | VB | power_in | Battery voltage monitoring input connected to the battery pack positive terminal via an isolation resistor; recommended RVB is 10kΩ to 200kΩ. |
| 7 | ILIM | passive | Over current protection threshold setting pin; connect a resistor between this pin and GND to set the OCP threshold. |
| 8 | VOUT | power_out | Output through the power MOSFET. |
| 9 | GND | power_in | The exposed pad must be soldered to a large PCB and connected to GND for maximum thermal dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN-8-EP(2x2) |
| Category | Power Management ICs |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operation Voltage Range | VIN | 3 |  | 6.55 | V | WS3235D | 4 |
| Input OVP Threshold Voltage | VIN_OVP | 6.65 | 6.8 | 6.95 | V | WS3235D | 4 |
| Input OVP Hysteresis |  |  | 100 | 120 | mV |  | 4 |
| Supply Voltage POR Threshold | VPOR | 2.5 | 2.7 | 2.9 | V | VPOR Rising | 4 |
| Under Voltage Lockout Threshold | VUVLO |  | 2.45 | 2.75 | V | VUVLO Falling | 4 |
| Input Quiescent Current | IQ |  | 330 | 400 | μA | EN = 0V | 4 |
| Input Shutdown Current | ISHDN |  | 55 | 70 | μA | EN = 5V | 4 |
| Over Current Protection | IOCP | 0.91 | 1 | 1.09 | A | RILIM = 25k | 4 |
| Battery Over Voltage Protection | VBOVP | 4.3 | 4.35 | 4.4 | V | Rising | 4 |
| Logic-Low Threshold Voltage | VIL |  |  | 0.4 | V | EN | 5 |
| Logic-High Threshold Voltage | VIH |  | 1.5 |  | V | EN | 5 |
| EN Internal Pull Down Resistor |  | 170 | 220 | 270 | kΩ |  | 5 |
| WRN Output Logic Low |  |  | 0.19 | 0.3 | V | Sink 1mA | 5 |
| On Resistance | RON |  | 200 | 300 | mΩ | IOUT = 500mA, 4.3V < VIN < 6.5V | 5 |
| Battery OVP Falling Threshold |  |  | 4.25 |  | V |  | 4 |
| Battery OVP Hysteresis |  |  | 30 |  | mV |  | 4 |
| Deglitch Time of POR |  |  | 8 |  | ms |  | 4 |
| Input OVP Propagation Delay |  |  | 0.1 |  | μs | VIN rising at 10V/μs | 4 |
| Input OVP Recovery Delay |  |  | 8 |  | ms |  | 4 |
| Over Current Protection Blanking Time | TOC |  | 180 |  | μs |  | 4 |
| Over Current Recover Delay |  |  | 64 |  | ms |  | 4 |
| Battery OVP Blanking Time | TVBOV |  | 180 |  | μs |  | 4 |
| Battery OVP Recover Delay |  |  | 8 |  | ms |  | 4 |
| VB Pin Leakage Current |  |  | 85 |  | nA | VVB = 4.4V | 4 |
| Over Temperature Protection Threshold | TSD |  | 155 |  | °C | Rising | 4 |
| OTP Hysteresis |  |  | 30 |  | °C |  | 4 |
| OTP Recover Delay |  |  | 8 |  | ms |  | 4 |
| Soft-Start Time |  |  | 8 |  | ms |  | 5 |
| WRN Output Logic High Leakage Current |  |  | 0.1 |  | μA |  | 5 |
| Thermal Resistance Junction to Ambient | RθJA |  | 90 |  | °C/W | DFN2x2-8L, Note 1 (1.5x1.5 in 2-layer FR4 board, still air) | 3 |
| Thermal Resistance Junction to Case | RθJC |  | 15 |  | °C/W | DFN2x2-8L | 3 |
| VIN pin voltage range | VIN | -0.3 |  | 30 | V |  | 3 |
| VOUT pin voltage range | VOUT | -0.3 |  | 15 | V |  | 3 |
| VB pin voltage range | VB | -0.3 |  | 15 | V |  | 3 |
| Other pins voltage range |  | -0.3 |  | 6 | V |  | 3 |
| Junction temperature | TJ |  |  | 150 | °C |  | 3 |
| Lead temperature (Soldering, 10sec.) | TL |  |  | 260 | °C | 10 sec | 3 |
| Operation temperature | Topr | -40 |  | 85 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| ESD HBM |  |  |  | 4000 | V | HBM | 3 |
| ESD CDM |  |  |  | 2000 | V | CDM | 3 |
| ESD MM |  |  |  | 200 | V | MM | 3 |

## CAD (KiCad official)

- Symbol: `WS3235D-8`
- Footprint: `Package_DFN_QFN:DFN-8-1EP_2x2mm_P0.5mm_EP0.6x1.2mm`
- 3D model: DFN-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files: `ws3235d-8-etched.step` / `ws3235d-8-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ws3235d-8.step` / `ws3235d-8.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI(Will Semicon) datasheet](docs/ws3235d-8-datasheet.pdf) (12 pp, sha256 `a939bee1deb836cc`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ws3235d-8-datasheet.pdf)