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WPT2F06-3

Public Made by Adom

by adom

WILLSEMI Will Semicon Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WPT2F06-3

WILLSEMI Will Semicon · Bipolar (BJT) · SOT-23

WPT2F06-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device ratings such as VEBO -5 V and continuous collector current IC -200 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base breakdown voltage BVEBO is -5 V minimum at IE=-10 uA with IC=0.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet rates VCEO at -40 V and continuous collector current at -200 mA, with collector power dissipation PC of 200 mW.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCEO -40 V IC=-1mA, IB=0mA 2
Collector-base breakdown voltage BVCBO -40 V IC=10uA, IE=0mA 2
Emitter-base breakdown voltage BVEBO -5 V IE=-10uA, IC=0mA 2
Collector cutoff current ICEX -50 nA VCE=-30V,VEB(OFF)=-3V 2
Collector cutoff current ICBO -100 nA VCB=-40V, IE=0A 2
Emitter cutoff current IEBO -100 nA VEB=-5V, IC=0A 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-50mA, IB=-5mA 2
Base-emitter saturation voltage VBE(sat) -0.95 V IC=-50mA, IB=-5mA 2
DC current gain hFE 100 300 IC=-10mA, VCE=-1V 2
DC current gain hFE 60 IC=-50mA, VCE=-1V 2
DC current gain hFE 30 IC=-100mA, VCE=-1V 2
Transition frequency fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 2
Noise figure NF 4 dB IC=-100μA; VCE=-5V; RS=1 kΩ; f=10Hz to15.7 kHz 2
Delay time td 35 ns VCC=-3V, VBE(off)=-0.5V; IC=-10mA, IB1=-1mA 2
Rise time tr 35 ns 2
Storage time ts 225 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2
Fall time tf 75 ns 2
Collector-emitter voltage VCEO -40 V 2
Collector-base voltage VCBO -40 V 2
Emitter-base voltage VEBO -5 V 2
Continuous collector current IC -200 mA 2
Collector power dissipation PC 200 mW 2
Junction temperature TJ 150 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance from junction to ambient RΘJA 625 °C /W 2

CAD (KiCad official)

  • Symbol: WPT2F06-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wpt2f06-3-etched.step / wpt2f06-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wpt2f06-3.step / wpt2f06-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (4 pp, sha256 93f74ec71a02737d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF