# WPM6207-3

**WILLSEMI Will Semicon** · MOSFETs · SOT-23-3

WPM6207-3 from WILLSEMI Will Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; VGS is limited to ±12V, with threshold VGS(TH) of -0.4V to -1V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the body diode anode side; continuous drain current is -5.7A steady state at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -20V with pulsed drain current IDM of -20A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0 V, ID = -250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS = -16V, VGS = 0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±12V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.65 | -1 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 25 | 32 | mΩ | VGS = -4.5V, ID = -5.7A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 32 | 40 | mΩ | VGS = -2.5V, ID = -3.7A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 42 | 60 | mΩ | VGS = -1.8V, ID = -2.0A | 3 |
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current (a, d) | ID |  |  | -6.4 | A | TA=25°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 |
| Continuous Drain Current (a, d) | ID |  |  | -5.7 | A | TA=25°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 |
| Continuous Drain Current (a, d) | ID |  |  | -5.1 | A | TA=70°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 |
| Continuous Drain Current (a, d) | ID |  |  | -4.6 | A | TA=70°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 |
| Continuous Drain Current (b, d) | ID |  |  | -5.5 | A | TA=25°C, t ≤ 10 s, minimum pad size | 2 |
| Continuous Drain Current (b, d) | ID |  |  | -4.8 | A | TA=25°C, steady state, minimum pad size | 2 |
| Continuous Drain Current (b, d) | ID |  |  | -4.4 | A | TA=70°C, t ≤ 10 s, minimum pad size | 2 |
| Continuous Drain Current (b, d) | ID |  |  | -3.9 | A | TA=70°C, steady state, minimum pad size | 2 |
| Maximum Power Dissipation (a, d) | PD |  |  | 1.5 | W | TA=25°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 |
| Maximum Power Dissipation (a, d) | PD |  |  | 1.2 | W | TA=25°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 |
| Maximum Power Dissipation (a, d) | PD |  |  | 1 | W | TA=70°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 |
| Maximum Power Dissipation (a, d) | PD |  |  | 0.8 | W | TA=70°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 |
| Maximum Power Dissipation (b, d) | PD |  |  | 1.1 | W | TA=25°C, t ≤ 10 s, minimum pad size | 2 |
| Maximum Power Dissipation (b, d) | PD |  |  | 0.8 | W | TA=25°C, steady state, minimum pad size | 2 |
| Maximum Power Dissipation (b, d) | PD |  |  | 0.7 | W | TA=70°C, t ≤ 10 s, minimum pad size | 2 |
| Maximum Power Dissipation (b, d) | PD |  |  | 0.5 | W | TA=70°C, steady state, minimum pad size | 2 |
| Pulsed Drain Current | IDM |  |  | -20 | A | Pulse width < 380 µs (c) | 2 |
| Operating Junction Temperature | TJ | -55 |  | 150 | °C |  | 2 |
| Lead Temperature | TL |  |  | 260 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Junction-to-Ambient Thermal Resistance (a) | RθJA |  | 65 | 80 | °C/W | t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 |
| Junction-to-Ambient Thermal Resistance (a) | RθJA |  | 85 | 100 | °C/W | Steady state, surface mounted on FR-4 with 1 in² pad | 2 |
| Junction-to-Ambient Thermal Resistance (b) | RθJA |  | 90 | 110 | °C/W | t ≤ 10 s, minimum pad size | 2 |
| Junction-to-Ambient Thermal Resistance (b) | RθJA |  | 115 | 140 | °C/W | Steady state, minimum pad size | 2 |
| Junction-to-Case Thermal Resistance | RθJC |  | 40 | 60 | °C/W | Steady state | 2 |

## CAD (KiCad official)

- Symbol: `WPM6207-3`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `wpm6207-3-etched.step` / `wpm6207-3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wpm6207-3.step` / `wpm6207-3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954863815806976) (7 pp, sha256 `e5eb94b80d775cf5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wpm6207-3-datasheet.pdf)