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WPM1483-3

Public Made by Adom

by adom

WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WPM1483-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WPM1483-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±8V with threshold of -0.45V to -0.85V at ID = -250uA.
2 S passive Source of the P-channel MOSFET, with body diode to drain; continuous current is -3.5A (10 s, TA=25°C).
3 D passive Drain of the P-channel MOSFET; drain-source voltage is rated -12V and pulsed drain current -10A.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 2
Gate-Source Voltage VGS -8 8 V 2
Continuous Drain Current (footnote a, 1 sq in pad) ID -3.5 A TA=25°C, t≤10 s 2
Continuous Drain Current (footnote a, 1 sq in pad) ID -3.2 A TA=25°C, steady state 2
Continuous Drain Current (footnote a, 1 sq in pad) ID -2.9 A TA=70°C, t≤10 s 2
Continuous Drain Current (footnote a, 1 sq in pad) ID -2.5 A TA=70°C, steady state 2
Continuous Drain Current (footnote b, minimum pad) ID -3.4 A TA=25°C, t≤10 s 2
Continuous Drain Current (footnote b, minimum pad) ID -2.9 A TA=25°C, steady state 2
Continuous Drain Current (footnote b, minimum pad) ID -2.7 A TA=70°C, t≤10 s 2
Continuous Drain Current (footnote b, minimum pad) ID -2.3 A TA=70°C, steady state 2
Maximum Power Dissipation (footnote a, 1 sq in pad) PD 0.74 W TA=25°C, t≤10 s 2
Maximum Power Dissipation (footnote a, 1 sq in pad) PD 0.57 W TA=25°C, steady state 2
Maximum Power Dissipation (footnote a, 1 sq in pad) PD 0.47 W TA=70°C, t≤10 s 2
Maximum Power Dissipation (footnote a, 1 sq in pad) PD 0.37 W TA=70°C, steady state 2
Maximum Power Dissipation (footnote b, minimum pad) PD 0.67 W TA=25°C, t≤10 s 2
Maximum Power Dissipation (footnote b, minimum pad) PD 0.49 W TA=25°C, steady state 2
Maximum Power Dissipation (footnote b, minimum pad) PD 0.43 W TA=70°C, t≤10 s 2
Maximum Power Dissipation (footnote b, minimum pad) PD 0.31 W TA=70°C, steady state 2
Pulsed Drain Current IDM -10 A Pulse width<380µs, duty cycle<2% 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (footnote a) RθJA 140 168 °C/W t≤10 s 2
Junction-to-Ambient Thermal Resistance (footnote a) RθJA 180 216 °C/W Steady state 2
Junction-to-Ambient Thermal Resistance (footnote b) RθJA 155 186 °C/W t≤10 s 2
Junction-to-Ambient Thermal Resistance (footnote b) RθJA 212 254 °C/W Steady state 2
Junction-to-Case Thermal Resistance RθJC 63 78 °C/W Steady state 2
Drain-to-Source Breakdown Voltage BVDSS -12 V VGS = 0 V, ID = -250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS = -10V, VGS = 0V 3
Gate-to-source Leakage Current IGSS -1 1 uA VDS = 0 V, VGS = ±8V 3
Gate Threshold Voltage VGS(TH) -0.45 -0.55 -0.85 V VGS = VDS, ID = -250uA 3
Drain-to-source On-resistance RDS(on) 31 37 mΩ VGS = -4.5V, ID = -3.5A 3
Drain-to-source On-resistance RDS(on) 40 55 mΩ VGS = -2.5V, ID = -3.0A 3
Drain-to-source On-resistance RDS(on) 56 88 mΩ VGS = -1.8V, ID = -2.0A 3
Forward Transconductance gfs 8.5 S VDS = -5.0V, ID = -2.0A 3
Input Capacitance CISS 1152 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 3
Output Capacitance COSS 253 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 3
Reverse Transfer Capacitance CRSS 236 pF VGS = 0 V, f = 1.0 MHz, VDS = -10 V 3
Total Gate Charge QG(TOT) 14.6 nC VGS = -4.5 V, VDD = -10 V, ID = -3.5A 3
Threshold Gate Charge QG(TH) 1.35 nC VGS = -4.5 V, VDD = -10 V, ID = -3.5A 3
Gate-to-Source Charge QGS 2.3 nC VGS = -4.5 V, VDD = -10 V, ID = -3.5A 3
Gate-to-Drain Charge QGD 5.7 nC VGS = -4.5 V, VDD = -10 V, ID = -3.5A 3
Turn-On Delay Time td(ON) 26 ns VGS = -4.5 V, VDD = -10 V, RL=3 , RG=6 3
Rise Time tr 23 ns VGS = -4.5 V, VDD = -10 V, RL=3 , RG=6 3
Turn-Off Delay Time td(OFF) 68 ns VGS = -4.5 V, VDD = -10 V, RL=3 , RG=6 3
Fall Time tf 45 ns VGS = -4.5 V, VDD = -10 V, RL=3 , RG=6 3
Forward Voltage (body diode) VSD -0.8 -1.5 V VGS = 0 V, IS = -1.0A 3

CAD (KiCad official)

  • Symbol: WPM1483-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wpm1483-3-etched.step / wpm1483-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wpm1483-3.step / wpm1483-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (7 pp, sha256 2b687f8abeb01f6b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF