component
WNMD2167-6
Public Made by Adomby adom
WILLSEMI(Will Semicon) MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownWNMD2167-6
WILLSEMI(Will Semicon) · MOSFETs · SOT-23-6L
WNMD2167-6 from WILLSEMI(Will Semicon), in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; VGS rated ±10 V with typical threshold 0.7 V (0.5 to 1.0 V at ID = 250 uA). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (internally shared with pin 5); VDS rated 20 V, continuous ID 6.3 A (10 s, TA=25°C). |
| 3 | G2 | input | Gate of MOSFET 2; VGS rated ±10 V with typical threshold 0.7 V (0.5 to 1.0 V at ID = 250 uA). |
| 4 | S2 | passive | Source of MOSFET 2; 20 V VDS rating, typical RDS(on) 16 mΩ at VGS = 4.5 V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (internally shared with pin 2); VDS rated 20 V, pulsed drain current 30 A. |
| 6 | S1 | passive | Source of MOSFET 1; 20 V VDS rating, typical RDS(on) 16 mΩ at VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | SOT-23-6L |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0 V, ID = 250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS =16 V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -1 | 1 | uA | VDS = 0 V, VGS = ±10V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.5 | 0.7 | 1 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 12 | 16 | 21 | mΩ | VGS = 4.5V, ID = 6.3A | 3 |
| Drain-to-source On-resistance | RDS(on) | 13 | 17.5 | 22 | mΩ | VGS = 3.8V, ID = 6.0A | 3 |
| Drain-to-source On-resistance | RDS(on) | 14 | 18 | 23 | mΩ | VGS = 3.1V, ID = 6.0A | 3 |
| Drain-to-source On-resistance | RDS(on) | 15 | 20 | 26 | mΩ | VGS = 2.5V, ID = 5.5A | 3 |
| Forward Voltage | VSD | 0.65 | 1.5 | V | VGS = 0 V, IS = 1.0A | 3 | |
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 2 | ||
| Continuous Drain Current (1 in² pad) | ID | 6.3 | A | TA=25°C, 10 s; steady state 5.7 | 2 | ||
| Continuous Drain Current (1 in² pad) | ID | 5 | A | TA=70°C, 10 s; steady state 4.6 | 2 | ||
| Maximum Power Dissipation (1 in² pad) | PD | 1.1 | W | TA=25°C, 10 s; steady state 0.9 | 2 | ||
| Maximum Power Dissipation (1 in² pad) | PD | 0.7 | W | TA=70°C, 10 s; steady state 0.6 | 2 | ||
| Continuous Drain Current (min pad) | ID | 5.8 | A | TA=25°C, 10 s; steady state 5.2 | 2 | ||
| Continuous Drain Current (min pad) | ID | 4.6 | A | TA=70°C, 10 s; steady state 4.1 | 2 | ||
| Maximum Power Dissipation (min pad) | PD | 0.9 | W | TA=25°C, 10 s; steady state 0.7 | 2 | ||
| Maximum Power Dissipation (min pad) | PD | 0.6 | W | TA=70°C, 10 s; steady state 0.5 | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | Pulse width<380µs, Duty Cycle<2% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (1 in² pad), single | RθJA | 76 | 94 | °C/W | Single operation, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (1 in² pad), single | RθJA | 115 | 145 | °C/W | Single operation, steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (min pad), single | RθJA | 92 | 115 | °C/W | Single operation, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (min pad), single | RθJA | 135 | 175 | °C/W | Single operation, steady state | 2 | |
| Junction-to-Case Thermal Resistance, single | RθJC | 63 | 78 | °C/W | Single operation, steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (1 in² pad), dual | RθJA | 79 | 97 | °C/W | Dual operation, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (1 in² pad), dual | RθJA | 118 | 148 | °C/W | Dual operation, steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (min pad), dual | RθJA | 96 | 118 | °C/W | Dual operation, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (min pad), dual | RθJA | 138 | 180 | °C/W | Dual operation, steady state | 2 | |
| Junction-to-Case Thermal Resistance, dual | RθJC | 66 | 81 | °C/W | Dual operation, steady state | 2 | |
| Forward Transconductance | gFS | 16 | S | VDS = 5.0 V, ID = 6.3A | 3 | ||
| Input Capacitance | CISS | 850 | pF | VGS = 0 V, f = 1MHz, VDS = 10 V | 3 | ||
| Output Capacitance | COSS | 127 | pF | VGS = 0 V, f = 1MHz, VDS = 10 V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 115 | pF | VGS = 0 V, f = 1MHz, VDS = 10 V | 3 | ||
| Total Gate Charge | QG(TOT) | 10.9 | nC | VGS = 4.5 V, VDD = 10 V, ID =6.3 A | 3 | ||
| Turn-On Delay Time | td(ON) | 22 | ns | VGS = 4.5 V, VDD = 10 V, RL= 2Ω, RG=6 Ω | 3 | ||
| Rise Time | tr | 18 | ns | VGS = 4.5 V, VDD = 10 V, RL= 2Ω, RG=6 Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 62 | ns | VGS = 4.5 V, VDD = 10 V, RL= 2Ω, RG=6 Ω | 3 | ||
| Fall Time | tf | 28 | ns | VGS = 4.5 V, VDD = 10 V, RL= 2Ω, RG=6 Ω | 3 |
CAD (KiCad official)
- Symbol:
WNMD2167-6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
wnmd2167-6-etched.step/wnmd2167-6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wnmd2167-6.step/wnmd2167-6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI(Will Semicon) datasheet (8 pp, sha256
abd6969997410ad0, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).