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WNM7002-3

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WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WNM7002-3

WILLSEMI Will Semicon · MOSFETs · SOT-23

WNM7002-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives VGS absolute maximum of ±20 V and a gate threshold voltage VGS(TH) of 1.0 V to 2.0 V at VGS = VDS, ID = 250 µA.
2 S passive Source of the N-channel MOSFET; the body diode forward voltage VSD is 0.8 V typical and 1.2 V maximum at VGS = 0 V, IS = 200 mA.
3 D passive Drain of the N-channel MOSFET; the datasheet gives drain-source voltage VDS of 60 V maximum and continuous drain current ID of 0.30 A at TA = 25°C (1 in² pad, 10 s).

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current (a, TA=25°C, 10 s) ID 0.3 A Surface mounted on FR4, 1 sq in pad, 1oz Cu; t≤10 s; TA=25°C 2
Continuous Drain Current (a, TA=25°C, steady state) ID 0.28 A Surface mounted on FR4, 1 sq in pad, 1oz Cu; steady state; TA=25°C 2
Continuous Drain Current (a, TA=70°C, 10 s) ID 0.24 A Surface mounted on FR4, 1 sq in pad, 1oz Cu; t≤10 s; TA=70°C 2
Continuous Drain Current (a, TA=70°C, steady state) ID 0.22 A Surface mounted on FR4, 1 sq in pad, 1oz Cu; steady state; TA=70°C 2
Maximum Power Dissipation (a, TA=25°C, 10 s) PD 0.96 W Surface mounted on FR4, 1 sq in pad, 1oz Cu; t≤10 s; TA=25°C 2
Maximum Power Dissipation (a, TA=25°C, steady state) PD 0.83 W Surface mounted on FR4, 1 sq in pad, 1oz Cu; steady state; TA=25°C 2
Maximum Power Dissipation (a, TA=70°C, 10 s) PD 0.61 W Surface mounted on FR4, 1 sq in pad, 1oz Cu; t≤10 s; TA=70°C 2
Maximum Power Dissipation (a, TA=70°C, steady state) PD 0.53 W Surface mounted on FR4, 1 sq in pad, 1oz Cu; steady state; TA=70°C 2
Continuous Drain Current (b, TA=25°C, 10 s) ID 0.26 A Surface mounted on FR4, minimum pad, 1oz Cu; t≤10 s; TA=25°C 2
Continuous Drain Current (b, TA=25°C, steady state) ID 0.25 A Surface mounted on FR4, minimum pad, 1oz Cu; steady state; TA=25°C 2
Continuous Drain Current (b, TA=70°C, 10 s) ID 0.21 A Surface mounted on FR4, minimum pad, 1oz Cu; t≤10 s; TA=70°C 2
Continuous Drain Current (b, TA=70°C, steady state) ID 0.2 A Surface mounted on FR4, minimum pad, 1oz Cu; steady state; TA=70°C 2
Maximum Power Dissipation (b, TA=25°C, 10 s) PD 0.78 W Surface mounted on FR4, minimum pad, 1oz Cu; t≤10 s; TA=25°C 2
Maximum Power Dissipation (b, TA=25°C, steady state) PD 0.66 W Surface mounted on FR4, minimum pad, 1oz Cu; steady state; TA=25°C 2
Maximum Power Dissipation (b, TA=70°C, 10 s) PD 0.5 W Surface mounted on FR4, minimum pad, 1oz Cu; t≤10 s; TA=70°C 2
Maximum Power Dissipation (b, TA=70°C, steady state) PD 0.42 W Surface mounted on FR4, minimum pad, 1oz Cu; steady state; TA=70°C 2
Pulsed Drain Current IDM 1.2 A Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% 2
Operating Junction Temperature TJ -55 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance (a, t≤10 s) RθJA 105 130 °C/W Surface mounted on FR4, 1 sq in pad, 1oz Cu; t≤10 s 2
Junction-to-Ambient Thermal Resistance (a, steady state) RθJA 130 150 °C/W Surface mounted on FR4, 1 sq in pad, 1oz Cu; steady state 2
Junction-to-Ambient Thermal Resistance (b, t≤10 s) RθJA 130 160 °C/W Surface mounted on FR4, minimum pad, 1oz Cu; t≤10 s 2
Junction-to-Ambient Thermal Resistance (b, steady state) RθJA 145 190 °C/W Surface mounted on FR4, minimum pad, 1oz Cu; steady state 2
Junction-to-Case Thermal Resistance RθJC 40 60 °C/W Steady state 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS = 0 V, ID = 250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 48V, VGS = 0V 3
Gate-to-source Leakage Current IGSS -5 5 uA VDS = 0 V, VGS = ±20V 3
Gate Threshold Voltage VGS(TH) 1 1.4 2 V VGS = VDS, ID = 250uA 3
Drain-to-source On-resistance (VGS=10V) RDS(on) 3.7 4.7 Ω VGS = 10V, ID = 0.3A 3
Drain-to-source On-resistance (VGS=4.5V) RDS(on) 3.8 5.6 Ω VGS = 4.5V, ID = 0.2A 3
Forward Voltage VSD 0.8 1.2 V VGS = 0 V, IS = 200mA 3

CAD (KiCad official)

  • Symbol: WNM7002-3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wnm7002-3-etched.step / wnm7002-3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wnm7002-3.step / wnm7002-3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256 7e1279b7a5d7e2e4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF